Interposer including air gap structure, methods of forming the same, semiconductor device including the interposer, and multi-chip package including the interposer
Example embodiments of the present invention relate to an interposer of a semiconductor device having an air gap structure, a semiconductor device using the interposer, a multi-chip package using the interposer and methods of forming the interposer. The interposer includes a semiconductor substrate including a void, a metal interconnect, provided within the void, thereby forming an air gap insulating the metal interconnect. The metal interconnect may be connected to a contact element, and may be maintained within the air gap using the contact element.
1. A semiconductor device, comprising:
an interposer having a semiconductor substrate and a metal interconnect and electrically connected between internal elements formed within a semiconductor integrated circuit,
wherein the metal interconnect is insulated from the semiconductor substrate using a void, the void being located between the metal interconnect and the semiconductor substrate to form an air gap, and
wherein the metal interconnect is entirely enclosed within the semiconductor substrate such that the air gap is between the metal interconnect and the semiconductor substrate.
2. The semiconductor device of claim 1 , further comprising:
at least one contact element formed on one side of the metal interconnect to electrically connect the metal interconnect to the semiconductor integrated circuit, wherein the at least one contact element is attached to the semiconductor substrate.
3. The semiconductor device of claim 2 , wherein the metal interconnect is maintained within the air gap by the contact element.
4. The semiconductor device of claim 1 , wherein the metal interconnect is fabricated using a micro electro mechanical system (MEMS).
5. The semiconductor device of claim 1 , wherein
the semiconductor integrated circuit includes a circuit unit having the internal elements, wherein the metal interconnect of the interposer is electrically connected to the internal elements.
6. The semiconductor device of claim 5 , wherein the semiconductor integrated circuit has no internal metal interconnect for electrical connection of internal elements.
7. The semiconductor device of claim 5 , wherein an area of the interposer is equal to an area of the semiconductor integrated circuit.
8. The semiconductor device of claim 5 , wherein the area of the interposer is larger than the area of the semiconductor integrated circuit.