Package with heat transfer
A semiconductor package includes an encapsulant, a semiconductor device within the encapsulant, and one or more terminals for electrically coupling the semiconductor device to a node exterior to the package. The package further includes bonding means coupling the semiconductor device to the one or more terminals. The semiconductor package is configured to dissipate heat through a top surface of the package. To directly dissipate heat via the top surface of the package, a thermally conductive layer is coupled to the semiconductor device, and the layer is exposed at a surface of the package.
1. A package for a semiconductor device, the package comprising:
the semiconductor device having an active surface and a passive surface;
one or more terminals coupled to the semiconductor device, a portion of the one or more terminals exposed at a mounting surface of the package;
a thermal cushion coupled to the passive surface semiconductor device, wherein the thermal cushion comprises a thermally and electrically conductive material or the thermal cushion comprises a thermally conductive and electrically insulating material, and the package further comprises a metallic layer thermally coupled between the thermal cushion and the cap structure;
a cap structure thermally coupled to the thermal cushion, the cap structure comprising a thermally conductive and electrically insulating material;
a second metallic layer thermally coupled to the cap structure such that the cap structure is positioned between the first metallic layer and the second metallic layer; and
a molding compound encapsulating at least a portion of the semiconductor device.
2. The package of claim 1 , wherein the thermal cushion comprises thermally and electrically conductive epoxy.
3. The package of claim 1 , wherein the thermal cushion comprises thermally conductive and electrically insulating epoxy.
4. The package of claim 1 , wherein the thermal cushion has a width dimension that is less than a width of a surface of the package.
5. The package of claim 1 , wherein the one or more terminals are coupled to the semiconductor device via a bonding means.
6. The package of claim 1 , wherein the cap structure comprises ceramic.
7. The package of claim 1 , wherein the cap has a dimension that is less than a width of an exterior surface of the package.
8. The package of claim 7 , wherein the thermal cushion forms a layer having a dimension that is approximately a width of the cap structure.
9. The package of claim 7 , wherein the thermal cushion forms a layer having a dimension that is approximately a width of the semiconductor device.
10. The package of claim 1 , wherein the cap structure had a dimension that varies from the interior to the exterior of the package.
11. The package of claim 10 , wherein the cap structure has a tapered shape.
12. The package of claim 10 , wherein the cap structure has an interlocking feature.
13. The package of claim 12 , wherein the interlocking feature comprises a tapered shape.
14. The package of claim 1 , wherein the one or more terminals are coupled to the semiconductor device via a solder ball.
15. The package of claim 1 , wherein the one or more terminals are coupled to the semiconductor device via a solder cylinder.
16. The package of claim 1 , wherein the active surface is oriented toward the one or more terminals.
17. The package of claim 1 , wherein the thermal cushion has a width dimension that is the same as a width dimension of the package.
18. The package of claim 1 , wherein the metallic layer has a width dimension that is the same as a width dimension of the package.
19. The package of claim 1 , wherein the second metallic layer has a width dimension that is the same as a width dimension of the package.
20. The package of claim 1 , further comprising a heat sink thermally coupled to the second metallic layer.
21. The package of claim 20 , wherein the heat sink has a width dimension that is the same as a width dimension of the package.