Sputtering cathode, sputtering apparatus provided with sputtering cathode, film-forming method, and method for manufacturing electronic device
The present invention provides a sputtering cathode whereby it is possible to increase the degree of freedom to adjust a distance between a target and a magnet unit. A sputtering cathode in accordance with one embodiment of the present invention includes a plurality of magnet units arranged at positions opposite to the rear surface of the target and a distance adjusting mechanism for separately adjusting a distance between the target and a magnet unit for each magnet unit. In addition, the sputtering cathode includes a reciprocating movement mechanism for reciprocating a plurality of magnet units in parallel to the rear surface of the target. The plurality of magnet units, the distance adjusting mechanism and the reciprocating movement mechanism may be housed in a magnet chamber that can be evacuated.
1. A sputtering cathode comprising a plurality of magnet units arranged at positions opposite to a surface for supporting a target,
each of the magnet units having:
a magnet of the magnet unit;
a distance adjusting mechanism for adjusting a distance from the magnet to the surface;
a reciprocating movement mechanism for reciprocating the magnet in parallel to the surface; and
a guide part configured so that the reciprocating movement mechanism is moved in a direction of the reciprocating,
wherein the guide part is engaged with the reciprocating movement mechanism so that the reciprocating movement mechanism moves in the direction of the reciprocating, and is connected to the distance adjusting mechanism,
the distance adjusting mechanism and the guide part are provided so that the distance adjusting mechanism and the guide part do not move in the direction of the reciprocating when the reciprocating movement mechanism moves in the direction of the reciprocating, and
wherein magnet units are arranged along a direction different from the direction of the reciprocating.
2. The sputtering cathode according to claim 1 , wherein the magnet units arranged along the predetermined direction form a group of magnet units having the longitudinal direction which is the predetermined direction, and a plurality of the groups of magnet units are arranged along the direction of the reciprocating.
3. A sputtering apparatus including a sputtering cathode according to claim 1 .
4. The sputtering apparatus according to claim 3 , further including:
a sputtering chamber to arrange the target; and
a magnet chamber in which the magnet units are arranged;
wherein the magnet chamber is evacuated by an exhaust system different from an exhaust system for evacuating the sputtering chamber.
5. A control apparatus for controlling a sputtering apparatus according to claim 3 , wherein when in predetermined film formation using the same target, sputtering conditions are changed in the course of the film formation, the control apparatus controls the distance adjusting mechanism, so as to adjust the distance in such a manner as to suppress an increase in the variation of film thickness distribution due to a change in the sputtering conditions for each time of the change and in each of the magnet units.
6. The control apparatus according to claim 5 , further including:
storage means in which positional information on the position of the magnet optimum for each sputtering condition is stored for each of the magnet units;
acquisition means for acquiring positional information corresponding to sputtering conditions after change for each of the magnet units by referring to the storage means, in a case where sputtering conditions are changed in the course of film formation; and
means for controlling the distance adjusting mechanism on the basis of the acquired positional information, so as to control the distance of each of the magnet units.