Baffle plate and substrate processing apparatus
A baffle plate, provided in a processing chamber for processing a substrate therein such that the baffle plate is disposed around a mounting table for mounting the substrate thereon, has a plurality of gas exhaust holes, through which a gas is exhausted from the processing chamber. The baffle plate has a stacked structure including a plurality of plate-shaped members. The baffle plate includes a pressure adjustment gas supply passageway to supply a pressure adjustment gas for adjusting a pressure in the processing chamber.
1. A baffle plate provided in a processing chamber for processing a substrate therein such that the baffle plate is disposed around a mounting table for mounting the substrate thereon, the baffle plate having a plurality of gas exhaust holes, through which a gas is exhausted from the processing chamber,
wherein the baffle plate has a stacked structure including a plurality of plate-shaped members, and the baffle plate includes a pressure adjustment gas supply passageway to supply a pressure adjustment gas for adjusting a pressure in the processing chamber.
2. The baffle plate of claim 1 , wherein the baffle plate is configured to supply the pressure adjustment gas upward from an upper side thereof.
3. The baffle plate of claim 1 , wherein the baffle plate is configured to supply the pressure adjustment gas downward from a lower side thereof.
4. The baffle plate of claim 1 , wherein the baffle plate is configured to supply the pressure adjustment gas into the gas exhaust holes.
5. The baffle plate of claim 1 , wherein the baffle plate is configured to separately control amounts of the pressure adjustment gas to be supplied through a plurality of sections divided in a circumferential direction of the mounting table.
6. The baffle plate of claim 1 , wherein argon gas or nitrogen gas is supplied as the pressure adjustment gas.
7. The baffle plate of claim 1 , further comprising an electrode configured to supply a radio frequency power or configured to have a predetermined electric potential.
8. The baffle plate of claim 1 , further comprising a temperature control mechanism.
9. A substrate processing apparatus comprising:
a processing chamber in which a substrate is processed;
a mounting table disposed in the processing chamber to mount the substrate thereon;
a processing gas supply mechanism configured to supply a processing gas into the processing chamber; and
a baffle plate disposed around the mounting table, the baffle plate having a plurality of gas exhaust holes, through which a gas is exhausted from the processing chamber, wherein the baffle plate has a stacked structure including a plurality of plate-shaped members, and the baffle plate includes a pressure adjustment gas supply passageway to supply a pressure adjustment gas for adjusting a pressure in the processing chamber.
10. The apparatus of claim 9 , wherein the baffle plate is configured to supply the pressure adjustment gas upward from an upper side thereof.
11. The apparatus of claim 9 , wherein the baffle plate is configured to supply the pressure adjustment gas downward from a lower side thereof.
12. The apparatus of claim 9 , wherein the baffle plate is configured to supply the pressure adjustment gas into the gas exhaust holes.
13. The apparatus of claim 9 , wherein the apparatus is configured to separately control amounts of the pressure adjustment gas to be supplied through a plurality of sections divided in a circumferential direction of the mounting table.
14. The apparatus of claim 9 , wherein argon gas or nitrogen gas is supplied as the pressure adjustment gas.
15. The apparatus of claim 9 , wherein the baffle plate further includes an electrode configured to supply a radio frequency power or configured to have a predetermined electric potential.
16. The apparatus of claim 9 , wherein the baffle plate further includes a temperature control mechanism.
17. The apparatus of claim 9 , wherein the substrate is plasma etched.