Anti-reflection film forming material, and method for forming resist pattern using the same

1. An anti-reflection film forming material for forming an anti-reflection film to be provided on a resist film, the material comprising:

(a) a water soluble resin comprising a vinyl acetate constituent unit represented by the following formula:

 and at least one constituent unit selected from the group consisting of a vinylpyrrolidone constituent unit represented by the following formula:

 and an acrylic acid-based constituent unit,

wherein the acrylic acid-based constituent unit is derived from at least one monomer selected from the group consisting of N,N-dimethylaminoethyl methacrylate represented by the following formula

 N,N-diethylaminoethyl methacrylate represented by the following formula

 N,N-dimethylaminoethyl acrylate represented by the following formula

 hydroxyethyl acrylate represented by the following formula

 and acrylic acid represented by the following formula

(b) a fluorine compound having a constituent unit represented by the following general formula (1):

in the above general formula (1), R 1 and R 2 each represent a direct bond or a methylene chain; R 3 and R 4 represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or a group represented by —(CH 2 ) n —O—R 5 —R 6 ; and at least one of R 3 and R 4 is a group represented by —(CH 2 ) n —O—R 5 —R 6 , wherein: R 5 represents a direct bond or an alkylene chain having 1 to 10 carbon atoms which may be interrupted with —O—; R 6 represents an alkyl group having 1 to 10 carbon atoms in which a portion or all hydrogen atoms are substituted with a fluorine atom; and n represents an integer of 0 to 10, and

wherein, the total number of carbon atoms present in R 1 and R 2 is 1 or 2, and

(c) a nitrogen-containing compound.

2. The anti-reflection film forming material according to claim 1 , wherein the water soluble resin (a) is included in an amount of 0.1% by mass to 10% by mass.

3. The anti-reflection film forming material according to claim 1 , wherein the water soluble resin (a) has a mass average molecular weight of 3,000 to 500,000.

4. The anti-reflection film forming material according to claim 1 , wherein the component (b) is included in an amount of 0.1% by mass to 10% by mass.

5. The anti-reflection film forming material according to claim 1 further comprising water.

6. The anti-reflection film forming material according to claim 1 , wherein the nitrogen-containing compound (c) is at least one compound selected from the group consisting of a quaternary ammonium hydroxide, an alkanolamine compound, and an amino acid derivative.

7. A method for obtaining a resist pattern comprising:

forming a resist film on a substrate;

forming an anti-reflection film on the resist film using the anti-reflection film forming material according to claim 1 ;

selectively irradiating light to the resist film through the anti-reflection film, optionally carrying out heat treatment; and

subjecting the irradiated resist film to a developing process to obtain the resist pattern, after removing or while removing the anti-reflection film.