Apparatus and method for producing purified hydrogen gas by a pressure swing adsorption processes

1. A method for producing purified hydrogen gas by a pressure swing adsorption processes, comprising:

adding an inert gas to an unpurified hydrogen gas;

feeding the unpurified hydrogen gas into an adsorption tower and purifying by pressure swing adsorption; and

detecting the inert gas in the purified hydrogen gas discharged from the adsorption tower.

2. The method according to claim 1 , wherein the inert gas is Ar gas.

3. The method according to claim 2 , wherein Ar gas is detected in the range of about 0.15 to 0.35 wt %.

4. The method according to claim 2 , wherein Ar gas is detected under an adsorption tower pressure range of about 0.59 to 0.76 MPaG.

5. A method for producing polycrystalline silicon, which purifies hydrogen gas discharged from a reaction of depositing polycrystalline silicon and feeds the hydrogen gas back to the reaction, comprising:

depositing polycrystalline silicon on silicon seed rods by reacting trichlorosilane with hydrogen gas in a reactor;

separating an unpurified hydrogen gas by condensing a discharged gas from the reactor;

adding an inert gas to the unpurified hydrogen gas;

feeding the unpurified hydrogen gas into an adsorption tower and purifying by pressure swing adsorption; and

detecting the inert gas in the purified hydrogen gas discharged from the adsorption tower.

6. The method of claim 5 , further comprising returning some of the discharged purified hydrogen gas back to the adsorption tower for regenerating the adsorption tower.

7. The method according to claim 5 , wherein the inert gas is Ar gas.

8. The method according to claim 7 , wherein Ar gas is detected in the range of about 0.15 to 0.35 wt %.

9. The method according to claim 7 , wherein Ar gas is detected under an adsorption tower pressure range of about 0.59 to 0.76 MPaG.