Semiconductor device
An interconnect substrate is placed over a first inductor of a semiconductor chip and a second inductor of another semiconductor chip. The interconnect substrate includes a third inductor and a fourth inductor. The third inductor is located above the first inductor. The distance from the first inductor to the third inductor is longer than the distance from the second inductor to the fourth inductor.
1. A semiconductor device comprising:
one or two semiconductor chips that include an interconnect layer; and
an interconnect substrate that is attached to an interconnect layer side of said one or two semiconductor chips,
wherein said one or two semiconductor chips includes:
a first circuit that generates a signal;
a first inductor that is formed in said interconnect layer and is connected to said first circuit;
a second circuit that processes said signal; and
a second inductor that is formed in said interconnect layer and is connected to said second circuit,
said interconnect substrate includes:
a third inductor that is located above said first inductor; and
a fourth inductor that is located above said second inductor and is connected to said third inductor,
a distance from said first inductor to said third inductor differs from a distance from said second inductor to said fourth inductor, and
wherein said distance from said first inductor to said third inductor is longer than said distance from said second inductor to said fourth inductor.
2. The semiconductor device according to claim 1 ,
wherein said interconnect substrate is formed with a silicon substrate.
3. The semiconductor device according to claim 2 ,
wherein said one or two semiconductor chips are formed with a silicon substrate, and
said interconnect substrate has a lower substrate impurity density than a substrate impurity density of said one or two semiconductor chips.
4. The semiconductor device according to claim 2 , further comprising a transmission/reception circuit that is formed in said interconnect substrate and is provided between said third inductor and said fourth inductor in a circuit diagram.
5. The semiconductor device according to claim 1 ,
wherein said third inductor and said fourth inductor are formed on a face of said interconnect substrate, said face being on the opposite side from said one or two semiconductor chips.
6. A semiconductor device, comprising:
one or two semiconductor chips that include an interconnect layer; and
an interconnect substrate that is attached to an interconnect layer side of said one or two semiconductor chips,
wherein said one or two semiconductor chips includes:
a first circuit that generates a signal;
a first inductor that is formed in said interconnect layer and is connected to said first circuit;
a second circuit that processes said signal; and
a second inductor that is formed in said interconnect layer and is connected to said second circuit,
said interconnect substrate includes:
a third inductor that is located above said first inductor; and
a fourth inductor that is located above said second inductor and is connected to said third inductor,
wherein a distance from said first inductor to said third inductor differs from a distance from said second inductor to said fourth inductor,
wherein said first circuit and said first inductor are formed in a first one of said semiconductor chips,
said second circuit and said second inductor are formed in a second one of said semiconductor chips, and
said interconnect substrate is placed over said first semiconductor chip and said second semiconductor chip.
7. The semiconductor device according to claim 6 ,
wherein said interconnect substrate is formed with a silicon substrate.
8. The semiconductor device according to claim 6 ,
wherein said one or two semiconductor chips are formed with a silicon substrate, and
said interconnect substrate has a lower substrate impurity density than a substrate impurity density of said one or two semiconductor chips.
9. The semiconductor device according to claim 6 , further comprising a transmission/reception circuit that is formed in said interconnect substrate and is provided between said third inductor and said fourth inductor in a circuit diagram.
10. The semiconductor device according to claim 6 ,
wherein said third inductor and said fourth inductor are formed on a face of said interconnect substrate, said face being on the opposite side from said one or two semiconductor chips.
11. A semiconductor device, comprising:
one or two semiconductor chips that include an interconnect layer; and
an interconnect substrate that is attached to an interconnect layer side of said one or two semiconductor chips,
wherein said one or two semiconductor chips includes:
a first circuit that generates a signal;
a first inductor that is formed in said interconnect layer and is connected to said first circuit;
a second circuit that processes said signal; and
a second inductor that is formed in said interconnect layer and is connected to said second circuit,
said interconnect substrate includes:
a third inductor that is located above said first inductor; and
a fourth inductor that is located above said second inductor and is connected to said third inductor,
wherein a distance from said first inductor to said third inductor differs from a distance from said second inductor to said fourth inductor,
wherein said first circuit, said second circuit, said first inductor, and said second inductor are formed in one of said semiconductor chips,
said first circuit and said first inductor are formed in a first region of said semiconductor chip,
said second circuit and said second inductor are formed in a second region of said semiconductor chip, and
said first region and said second region are insulated from each other.
12. The semiconductor device according to claim 11 ,
wherein said interconnect substrate is formed with a silicon substrate.
13. The semiconductor device according to claim 11 ,
wherein said one or two semiconductor chips are formed with a silicon substrate, and
said interconnect substrate has a lower substrate impurity density than a substrate impurity density of said one or two semiconductor chips.
14. The semiconductor device according to claim 11 , further comprising a transmission/reception circuit that is formed in said interconnect substrate and is provided between said third inductor and said fourth inductor in a circuit diagram.
15. The semiconductor device according to claim 11 ,
wherein said third inductor and said fourth inductor are formed on a face of said interconnect substrate, said face being on the opposite side from said one or two semiconductor chips.