Semiconductor wafer processing method and apparatus
A processing method of a semiconductor wafer is provided. The method comprising the steps of: removing at least part of oxide film from a surface of the semiconductor wafer; removing liquid from the surface; and providing at least partial oxide film on the surface by applying an oxidizing gas wherein a gas flow of the oxidizing gas and/or an ambient gas involved by the oxidizing gas is characterized by an unsaturated vapor pressure of the liquid such that the liquid on the surface vaporizes. The above-described steps are conducted in this order.
1. A processing method of a semiconductor wafer comprising the steps of:
setting the semiconductor wafer horizontally;
removing at least part of an oxide film from a surface of the semiconductor wafer by applying hydrogen fluoride gas to the semiconductor wafer while the semiconductor wafer is rotated such that the surface becomes water repellant such that a contact angle of water becomes at least 32 degrees, the hydrogen fluoride gas made by bubbling nitrogen gas into aqueous hydrofluoric acid and collecting a gas phase from the bubbled aqueous hydrofluoric acid;
removing a portion of water from the surface by stopping application of the hydrogen fluoride gas while the semiconductor wafer is continuously rotated at less than 500 rpm; and
forming at least a partial oxide film on the surface by applying oxidizing gas such that the surface becomes so hydrophilic that a contact angle of water becomes not exceeding 12 degrees wherein a gas flow of the oxidizing gas is characterized by an unsaturated vapor pressure such that remaining water on the surface of the semiconductor wafer vaporizes,
wherein the above steps are conducted in this order and the step of forming at least said partial oxide film is a final step of the processing method.
2. The processing method according to claim 1 , wherein the semiconductor wafer is a silicon wafer.
3. The processing method according to claim 1 , wherein:
the step of removing at least part of said oxide film is characterized in that remaining water forms a spherical shape on the surface due to a water repellent property; and
the step of removing said water is characterized in that the spherical shape of water is moved on the surface by centrifugal force caused by rotation of the semiconductor wafer.
4. The processing method according to claim 3 , wherein the step of removing said water comprises jetting a liquid removing gas from a nozzle configured to oppose the surface of the semiconductor wafer at a substantially central position of the semiconductor wafer such that the spherical shape of water is moved toward a circumferential edge of the semiconductor wafer.
5. The processing method according to claim 3 , wherein the semiconductor wafer is rotated at a rotational speed of not exceeding 300 rpm in the step of removing said water.
6. The processing method according to claim 1 , wherein the oxidizing gas in the step of forming the at least the partial oxide film on the surface contains carbon dioxide.