IP Library Granted Patent US 8,343,714
Granted Patent B2
US 8,343,714 · App. 12/762,666 · Granted Jan 1, 2013

Resist applying and developing method, resist film processing unit, and resist applying and developing apparatus comprising the unit

Assignee: Tokyo Electron Limited
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Quick Facts
Patent No.
US 8,343,714
App. No.
12/762,666
Granted
Jan 1, 2013
Kind
B2
Abstract

A resist film processing unit is disclosed that can improve an etching resistance of a resist film formed on a substrate. The resist film processing unit includes a light source to irradiate an ultraviolet light on a resist film patterned by a development process, a heating part configured to heat the resist film irradiated with the ultraviolet light by the light source, and a solvent processing unit configured to expose the resist film to a solvent gas including a solvent that contains a benzene ring, during or after heating of the resist film by the heating part.

Claims (11)

1. A resist applying and developing method comprising:

forming a resist film on a substrate;

exposing the resist film formed on the substrate to a light generated by an ArF excimer laser using a reticle;

developing the exposed resist film, thereby patterning the resist film on the substrate;

decomposing an adamantly group and/or a lactone group serving as a protection group in the resist film by irradiating an ultraviolet light on the resist film patterned by the developing;

heating the resist film, during or after the irradiation of the ultraviolet light, thereby facilitating decomposition of the adamantly group and/or the lactone group; and

introducing a benzene ring to the protection group in the resist film by exposing the resist film to a solvent gas that contains the benzene ring, during or after the heating of the resist film.

2. The resist applying and developing method according to claim 1 , wherein the solvent is a phenolic solvent selected from a phenol group.

3. The resist applying and developing method according to claim 2 , wherein the phenolic solvent is m-methylphenol.

4. The resist applying and developing method according to claim 1 , wherein an ArF (Argon Fluoride) light source is used in the exposing of the resist film.

5. The resist applying and developing method according to claim 1 , wherein the wavelength of the ultraviolet light ranges from 150 nm to 450 nm.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 1, 2010
From: SHIRAISHI, GOUSUKE; INATOMI, YUICHIRO
To: TOKYO ELECTRON LIMITED
Reel/Frame 024622/0007 →
Priority Claims (1)
JP 2009-101241 · Apr 17, 2009 · national
Continuity (1)
Related Publication 20100266969A1 · Oct 21, 2010