Semiconductor device
A semiconductor device including a substrate, a gate structure, a spacer and source/drain regions is provided. The gate structure is on the substrate, wherein the gate structure includes, from bottom to top, a high-k layer, a work function metal layer, a wetting layer and a metal layer. The spacer is on a sidewall of the gate structure. The source/drain regions are in the substrate beside the gate structure.
1. A semiconductor device, comprising:
a substrate;
a gate structure on the substrate, wherein the gate structure comprises, from bottom to top, a high-k layer, a work function metal layer, a wetting metal layer and a metal layer, and the metal layer is a bi-layer structure comprising a AlTi layer and a AlTiO layer;
a spacer on a sidewall of the gate structure; and
source/drain regions in the substrate beside the gate structure.
2. The semiconductor device of claim 1 , wherein the gate structure further comprises an insulation layer formed between the substrate and the high-k layer.
3. The semiconductor device of claim 1 , wherein the metal layer comprises Al.
4. The semiconductor device of claim 1 , wherein the metal layer is selected from the group consisting of TiN, Ti, Ta, TaN, TiC, TaC, TiAl, W, WN, Co, Cu, Ni and combinations thereof.
5. The semiconductor device of claim 1 , wherein the AlTi layer is under the AlTiO layer.
6. The semiconductor device of claim 5 , wherein an Al/Ti ratio in the AlTi layer is 65:35 atom %.
7. The semiconductor device of claim 5 , wherein an Al/Ti/O ratio in the AlTiO layer is 40:10:50 atom %.
8. The semiconductor device of claim 1 , wherein the wetting metal layer comprises Ti, TiAl x , Ti rich TiN, Al or a combination thereof.
9. The semiconductor device of claim 1 , wherein the wetting metal layer is formed by a physical vapor deposition (PVD) process.
10. The semiconductor device of claim 1 , wherein the work function metal layer comprises TiN, TaC, TaCNO, TaCN, TiAl x or TaN.
11. The semiconductor device of claim 1 , wherein the gate structure further comprises a middle layer formed between the work function metal layer and the wetting metal layer.
12. The semiconductor device of claim 11 , wherein the middle layer and the work function metal layer comprise different materials.
13. The semiconductor device of claim 12 , wherein the middle layer comprises Ti rich TiN or Ti rich TiAl x .
14. The semiconductor device of claim 11 , wherein the middle layer is for adjusting a work function value of the work function metal layer.
15. The semiconductor device of claim 1 , wherein the high-k layer comprises HfO 2 , ZrO 2 , Al 2 O 3 , AlN, TiO 2 , La 2 O 3 , Y 2 O 3 , Gd 2 O 3 , Ta 2 O 5 or a combination thereof.
16. The semiconductor device of claim 1 , further comprising a stress layer on a sidewall of the spacer.
17. The semiconductor device of claim 16 , wherein the stress layer comprises silicon nitride.
18. The semiconductor device of claim 1 , wherein the source/drain regions are doped regions.
19. The semiconductor device of claim 1 , wherein the source/drain regions are epitaxial layers.