Temperature compensation circuit and method for generating a voltage reference with a well-defined temperature behavior
A temperature compensation circuit, comprises a temperature sensor circuit. The circuit comprises two or more temperature sensitive devices. In use, the devices are operated at different current densities and sense virtually the same ambient temperature. The devices provide temperature dependent signals having linear components with slopes of identical signs. The circuit further comprises one of more differential signal providing device for generating a difference of the signals generated by the temperature sensitive devices. A method for generating a voltage reference with a well-defined temperature behavior, comprises applying different current densities to two or more temperature sensitive devices of a temperature sensor circuit; sensing virtually the same ambient temperature with the two or more temperature sensitive devices. Each temperature sensitive devices generates a slightly different temperature dependent signal; and provide at least one differential signal based on said temperature dependent signals.
1. A temperature compensation circuit for generating a voltage reference with a well-defined temperature behavior, comprising:
a temperature sensor circuit, said circuit comprising;
two or more temperature sensitive devices which when operated have different current densities, for sensing virtually the same ambient temperature and providing temperature dependent signals having linear components with slopes of identical signs; and
at least one differential signal providing device, for generating a difference of said signals generated by said temperature sensitive devices, said difference forming the voltage reference.
2. The temperature compensation circuit as claimed in claim 1 , wherein said differential signal providing device is a differential amplifier configuration.
3. The temperature compensation circuit as claimed in claim 1 , wherein said temperature sensitive devices comprises a semiconducting device with a junction having a temperature dependent conductivity.
4. The temperature compensation circuit as claimed in claim 1 , wherein said different current densities are generated by metal oxide semiconducting devices with differing dimensions.
5. The temperature compensation circuit as claimed in claim 1 , wherein said voltage reference is a virtually linear function of the temperature over at least some range of the temperature.
6. The temperature compensation circuit as claimed in claim 1 , wherein said voltage reference is used as a bias voltage for an electronic circuit being subject to virtually the same temperature changes.
7. The temperature compensation circuit as claimed in claim 6 , wherein said voltage reference at least partially compensates for a gain variation of said electronic circuit.
8. The temperature compensation circuit as claimed in claim 6 , wherein said electronic circuit is an electronic amplifier.
9. The temperature compensation circuit as claimed in claim 8 , wherein said bias voltage is a bias voltage for at least one cascode stage of said electronic amplifier.
10. The temperature compensation circuit as claimed in claim 9 , wherein said temperature compensation circuit for generating a voltage reference comprises at least a second differential signal providing device providing a second voltage reference being used as a bias voltage for a buffer stage following said at least one cascode stage of said electronic amplifier.
11. The temperature compensation circuit as claimed in claim 8 , wherein said electronic amplifier is operable within a frequency range located between 50 and 120 GHz.
12. A method for generating a voltage reference with a well-defined temperature behavior, comprising:
applying different current densities to two or more temperature sensitive devices of a temperature sensor circuit;
sensing virtually the same ambient temperature with said two or more temperature sensitive devices;
each temperature sensitive devices generating a temperature dependent signal; and
providing at least one differential signal based on said temperature dependent signals, wherein said temperature dependent signals all comprise linear components with slopes of identical signs.
13. The method as claimed in claim 12 , wherein said temperature dependent signal is generated from a temperature dependent conductivity of a junction of a semiconducting device of said temperature sensitive devices.
14. The method as claimed in claim 12 , wherein said different current densities are generated by metal oxide semiconducting devices with differing dimensions.
15. The method as claimed in claim 12 , wherein a plot of said voltage reference against temperature comprises at least one virtually linear section.
16. The method as claimed in claim 12 , comprising:
using said voltage reference as a bias voltage for an electronic circuit being subject to virtually the same temperature changes.
17. The method as claimed in claim 16 , wherein said electronic circuit is an electronic amplifier.
18. The method as claimed in claim 16 , wherein said using of said voltage reference at least partially compensates for a gain variation of said electronic circuit.
19. A low-noise amplifier (LNA) comprising a temperature compensation circuit as claimed in claim 1 .
20. A vehicle radar device comprising a low-noise amplifier as claimed in claim 19 .