System and method for improved automated semiconductor wafer manufacturing

1. A system for automated semiconductor wafer manufacturing comprising:

a smart overlay control (SOC) database having empirical alignment data related to overlay alignment;

a simulation module communicatively coupled to the SOC database, the simulation module determining a simulated overlay alignment of a wafer on a plurality of photolithography tools in a tool bank based on the empirical alignment data stored in the SOC database; and

a dispatch module communicatively coupled to the SOC database and the simulation module, the dispatch module receiving the empirical alignment data and expiration status of the empirical alignment data from the SOC database, wherein the expiration status is based on an expiration date, the dispatch module controlling the dispatch of the wafer to one of the plurality of photolithography tools in the tool bank based at least in part on the simulated overlay alignment.

2. The system of claim 1 , wherein the empirical alignment data relates to different photolithography masks used on a particular photolithography tool.

3. The system of claim 1 , wherein the empirical alignment data relates to different photolithography tools used with a particular photolithography mask.

4. The system of claim 1 , wherein the empirical alignment data relates to simulation results based on a compensation algorithm with a particular photolithography tool.

5. The system of claim 1 , wherein the SOC database further comprises compensation algorithms suitable for use on one or more of the plurality of photolithography tools in the tool bank stored therein, the compensation algorithms used to predict the overlay alignment of a leading lot wafer.

6. The system of claim 1 , wherein the system further comprises a manufacturing execution system (MES) database communicatively coupled to the dispatch module, wherein the MES database stores scripts and configuration data used to control processing of the wafer.

7. The system of claim 6 , wherein the dispatch module receives wafer in process (WIP) batch status data and tool loading status controls dispatch of the wafer to the plurality of tools in the tool bank, transmits the WIP batch status data to the simulation module,-and determines to which tool in the plurality of photolithography tools in the tool bank to dispatch the wafer.

8. The system of claim 1 , wherein the simulation module receives empirical alignment data from the SOC database, simulates the overlay alignment of the wafer using a plurality of algorithms on the plurality of photolithography tools in the tool bank producing simulated overlay correction values, compares the simulated overlay correction values to a maximum overlay correction value, determines a precision degree of the plurality of algorithms based on the simulations, compares the precision degree of the plurality of algorithms to a maximum precision degree, and transmits suitability information regarding the plurality of algorithms to the SOC database.

9. A computer program product for providing an automated semiconductor wafer manufacturing process, the computer program product having a non-transitory machine-readable medium with a computer program embodied thereon, the computer program comprising:

computer program code for selecting a photolithography machine to process a wafer from a plurality of photolithography machines in a tool bank, wherein the computer program code for selecting a photolithography machine comprises program code for determining an expiration status of algorithm alignment data, wherein the expiration status is based on an expiration date;

computer program code for simulating one or more alignment algorithms for the wafer, the simulations identifying a selected algorithm based at least in part on empirical alignment data; and

computer program code for aligning the photolithography machine according to the selected algorithm.

10. The computer program product of claim 9 , wherein the empirical alignment data relates to different photolithography masks used on a particular photolithography tool.

11. The computer program product of claim 9 , wherein the empirical alignment data relates to different photolithography tools used with a particular photolithography mask.

12. The computer program product of claim 9 , wherein the computer program code for simulating one or more alignment algorithms for the wafer comprises:

computer program code for identifying a maximum precision degree for a particular wafer;

computer program code for identifying a maximum overlay correction value;

computer program code for selecting a first algorithm;

computer program code for simulating the first algorithm;

computer program code for determining whether the first algorithm aligns a leading lot within alignment specifications; and

upon determining that the first algorithm does not align a leading lot within alignment specifications, computer program code for selecting a second algorithm, and repeating the steps of simulating and determining using the second algorithm.

13. The computer program product of claim 12 , wherein the computer program further comprises at least one of the first algorithm and the second algorithm that compensates for leading lot behavior based at least in part on historical empirical alignment data corresponding to the use of a single photolithography mask with a plurality of photolithography machines.

14. The computer program product of claim 12 , wherein the computer program further comprises at least one of the first algorithm and the second algorithm that compensates for leading lot behavior at least in part on historical empirical alignment data for different photolithography machines using the same mask and historical empirical alignment data for different photolithography masks on the same photolithography machine.

15. The computer program product of claim 12 , wherein the computer program code for the simulating the first algorithm comprises computer program code for:

simulating an overlay alignment of a wafer on a particular photolithography machine using the first algorithm to obtain a plurality of overlay correction values, wherein the overlay correction values represent the amount of shift from a neutral position;

comparing the plurality of overlay correction values to the maximum overlay correction value;

in the event that the plurality of overlay correction values are within the maximum overlay correction value, determining a precision degree of the first algorithm;

comparing the precision degree of the first algorithm to the maximum precision degree for the wafer; and

in the event that the precision degree of the first algorithm is less than the maximum precision degree for the particular wafer, identifying the first algorithm as useable on the simulated photolithography machine.

16. The computer program product of claim 9 , wherein the computer program code for selecting the photolithography machine from the plurality of photolithography machines in the tool bank comprises computer program code for:

determining a batch status information for the wafer;

determining a load status of the plurality of photolithography machines in the tool bank;

selecting a photolithography machine from the plurality of photolithography machines based on the load status of the plurality of photolithography machines in the tool bank, the expiration status of the algorithm alignment data, and the batch status information of the wafer.

17. The system of claim 1 , wherein the dispatch module determines to which tool in the plurality of photolithography tools to dispatch the wafer based on the simulated overlay alignment and the expiration status of the empirical alignment data.