Information storage system which includes a bonded semiconductor structure
View Patent ↗An information storage system includes a bonded semiconductor structure having a memory circuit region carried by an interconnect region. The memory circuit region includes a memory control device region having a vertically oriented memory control device. The memory circuit region includes a memory device region in communication with the memory control device region. The memory device region includes a memory device whose operation is controlled by the vertically oriented memory control device.
1. A bonded semiconductor structure, comprising:
a vertically oriented semiconductor device carried by a conductive bonding contact region which establishes a bonding interface, the vertically oriented semiconductor device including a mesa structure, and a control dielectric which extends around a sidewall of the mesa structure, the vertically oriented semiconductor device being in communication with an interconnect region through the bonding interface; and
a memory device region in communication with the vertically oriented semiconductor device;
wherein the memory device region is responsive to a signal which flows through the bonding interface.
2. The structure of claim 1 , wherein the signal flows through the vertically oriented semiconductor device.
3. The structure of claim 1 , wherein the vertically oriented semiconductor device includes a stack of semiconductor regions.
4. The structure of claim 3 , wherein the stack extends between the bonding interface and memory device region.
5. The structure of claim 3 , wherein the stack includes a planarized surface which faces the bonding interface.
6. The structure of claim 5 , wherein the stack includes an opposed planarized surface which faces away from the bonding interface.
7. The structure of claim 1 , wherein the memory device region includes a ferroelectric memory device.
8. The structure of claim 1 , wherein the memory device region includes phase change memory device.
9. The structure of claim 1 , wherein the memory device region includes a magnetoresistive memory device.
10. The structure of claim 1 , wherein the signal is adjustable in response to adjusting a signal which flows through the Internet.
11. The structure of claim 1 , wherein the signal is adjustable in response to adjusting a signal which flows through a cellular network.
12. A bonded semiconductor structure, comprising:
a vertically oriented semiconductor device in communication with an interconnect region through a bonding interface, wherein the vertically oriented semiconductor device includes a mesa structure;
a memory device region in communication with the vertically oriented semiconductor device;
a conductive bonding contact region which carries the mesa structure; and
a control dielectric which extends around a sidewall of the mesa structure.
13. The structure of claim 12 , wherein the mesa structure includes a planarized surface which faces the bonding interface.
14. The structure of claim 12 , wherein the memory device region is responsive to a signal which flows through the bonding interface and conductive bonding contact region.
15. The structure of claim 12 , further including a control terminal operatively coupled with the mesa structure through the control dielectric.
16. The structure of claim 12 , wherein the mesa structure extends between the conductive bonding contact region and memory device region.
17. The structure of claim 12 , wherein the memory device region is responsive to a first signal which flows through the bonding interface, the first signal being adjustable in response to adjusting a second signal which flows through the Internet.
18. The structure of claim 12 , wherein the memory device region is responsive to a first signal which flows through the bonding interface, the first signal being adjustable in response to adjusting a second signal which flows through a cellular network.