IP Library Granted Patent US 8,475,668
Granted Patent B2
US 8,475,668 · App. 12/902,721 · Granted Jul 2, 2013

Substrate liquid processing apparatus, substrate liquid processing method, and storage medium having substrate liquid processing program stored therein

Inventors: Hiroshi Tanaka (Koshi, JP); Teruomi Minami (Koshi, JP); Yosuke Kawabuchi (Koshi, JP); Norihiro Ito (Koshi, JP); Fumihiro Kamimura (Koshi, JP); Takashi Yabuta (Koshi, JP); Kazuki Kosai (Beaverton, OR); Takeshi Uno (Koshi, JP); Kenji Sekiguchi (Nirasaki, JP); Yasushi Fujii (Nirasaki, JP)
Assignee: Tokyo Electron Limited
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Quick Facts
Patent No.
US 8,475,668
App. No.
12/902,721
Granted
Jul 2, 2013
Kind
B2
Abstract

Provided are a substrate liquid processing apparatus, a substrate liquid processing method, and a computer readable storage medium having a substrate liquid processing program stored therein that can prevent the occurrence of the electrostatic breakdown caused by the discharge of electric charges in a substrate. The substrate liquid processing apparatus processes a circuit-forming surface of the substrate with a chemical liquid. Furthermore, prior to processing the substrate with the chemical liquid, the substrate liquid processing apparatus performs an anti-static process for an surface opposite to the circuit-forming surface of the substrate by an anti-static liquid, thereby emitting the electric charges on the substrate.

Claims (8)

1. A substrate liquid processing method comprising:

processing a substrate with a chemical liquid supplied from a first processing liquid supply device toward a circuit-forming surface of the substrate; and

prior to the processing step, ejecting an anti-static liquid from a second processing liquid supply device toward a surface opposite to the circuit-forming surface thereby performing an anti-static process on the surface opposite to the circuit-forming surface prior to the processing step emitting electric charges exist inside of the substrate from the surface opposite to the circuit-forming surface of the substrate.

2. The substrate liquid processing method according to claim 1 , further comprising, prior to the anti-static process, performing a preliminary process in which a deionized water serving as a processing liquid is supplied toward the substrate while rotating the substrate thereby forming a thin film of the deionized water on the surface of the substrate.

3. The substrate liquid processing method according to claim 2 , wherein the conductivity of the deionized water is lower than that of the anti-static liquid.

4. The substrate liquid processing method according to claim 1 , wherein the conductivity of the anti-static liquid is the same as or higher than that of the chemical liquid used for processing the circuit-forming surface of the substrate.

5. The substrate liquid processing method according to claim 4 , wherein the anti-static liquid is the chemical liquid used for processing the circuit-forming surface of the substrate.

6. The substrate liquid processing method according to claim 1 , further comprising ejecting a mist phase of a mixture of a rinse liquid for rising the substrate and a gas from the second processing liquid supply device toward a surface opposite to the circuit-forming surface of the substrate, after the processing step.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 21, 2010
From: TANAKA, HIROSHI; MINAMI, TERUOMI; KAWABUCHI, YOSUKE; ITO, NORIHIRO; KAMIMURA, FUMIHIRO; YABUTA, TAKASHI; KOSAI, KAZUKI; UNO, TAKASHI; SEKIGUCHI, KENJI; FUJII, YASUSHI
To: TOKYO ELECTRON LIMITED
Reel/Frame 025532/0601 →
Priority Claims (2)
JP 2009-239452 · Oct 16, 2009 · national
JP 2010-180668 · Aug 12, 2010 · national
Continuity (1)
Related Publication 20110089137A1 · Apr 21, 2011