Method of manufacturing semiconductor device having a bumped wafer and protective layer

1. A method of manufacturing a semiconductor device, comprising the steps of:

pasting a film for forming a protective layer in which a support base, an adhesive layer, and a thermosetting resin layer are laminated, in this order, onto a bumped wafer in which a low dielectric material layer is formed, with the thermosetting resin layer serving as a pasting surface,

peeling the support base and the adhesive layer from the thermosetting resin layer,

forming a protective layer by thermally curing the thermosetting resin layer, and

dicing the bumped wafer and the protective layer together.

2. The manufacturing method according to claim 1 , wherein

a melt viscosity of the thermosetting resin layer is 1×10 2 Pa·S or more and 2×10 4 Pa·S or less at a temperature when the film for forming a protective layer is pasted onto the bumped wafer, and

a shear modulus of the adhesive layer is 1×10 3 Pa or more and 2×10 6 Pa or less at the temperature when the film for forming a protective layer is pasted onto the bumped wafer.

3. The manufacturing method according to claim 2 , wherein

the thermosetting resin layer has a thickness of 0.05 to 0.9 times a height of a bump on the bumped wafer.

4. The manufacturing method according to claim 1 , wherein

the thermosetting resin layer has a thickness of 0.05 to 0.9 times a height of a bump on the bumped wafer.