Method for manufacturing a chip-size double side connection package
A low resistance metal is charged into holes formed in a semiconductor substrate to thereby form through electrodes. Post electrodes of a wiring-added post electrode component connected together by a support portion thereof are simultaneously fixed to and electrically connected to connection regions formed on an LSI chip. On the front face side, after resin sealing, the support portion is separated so as to expose front face wiring traces. On the back face side, the semiconductor substrate is grounded so as to expose tip ends of the through electrodes. The front face wiring traces exposed to the front face side and the tip ends of the through electrodes exposed to the back face side are used as wiring for external connection.
1. A method for manufacturing a chip-size double side connection package configured such that a semiconductor chip including a semiconductor substrate on which a LSI region and electrode connection regions are formed is connected to wiring for external connection provided on a first main face and to wiring for external connection provided on a second main face, the first main face and the second main face being located above and below the semiconductor chip, respectively, the method comprising:
forming a wiring-added post electrode component having a plurality of post electrodes connected to the electrode connection regions, a plurality of wiring traces respectively connected to the plurality of post electrodes, and an insulation tape of thin film provided on the back side of the plurality of post electrodes and the wiring traces, supported by a support portion;
simultaneously fixing and electrically connecting the plurality of post electrodes of the wiring-added post electrode component, which are coupled together by the support portion, to the electrode connection regions;
charging resin into a space between the LSI region and the insulation tape, and then separating the support portion so as to expose the insulation tape acting as a protection film, wherein, on the first main face, the plurality of wiring traces connected to the plurality of post electrodes are used as the wiring for external connection and on the second main face, tip ends of through electrodes formed to pass through the semiconductor substrate are used as the wiring for external connection.
2. A chip-size double side connection package configured such that a semiconductor chip including a semiconductor substrate on which a LSI region and electrode connection regions are formed is connected to wiring for external connection provided on a first main face and to wiring for external connection provided on a second main face, the first main face and the second main face being located above and below the semiconductor chip, respectively, the chip-size double side connection package comprising:
a plurality of post electrodes connected to the electrode connection regions;
a plurality of wiring traces respectively connected to the plurality of post electrodes;
an insulation tape of thin film provided on the back side of the plurality of post electrodes and the wiring traces; and
a resin seal portion filling a space between the LSI region and the insulation tape, wherein, on the first main face, the plurality of wiring traces connected to the plurality of post electrodes are used as the wiring for external connection and on the second main face, tip ends of through electrodes formed to pass through the semiconductor substrate are used as the wiring for external connection, the insulation tape being connected to a support portion prior to applying the resin seal portion, the insulation tape being separated from the support portion after the resin seal is applied, wherein the semiconductor substrate and the resin seal directly contact the LSI region.
3. A method for manufacturing a chip-size double side connection package, the method comprising:
providing a semiconductor chip comprising a semiconductor substrate a LSI region and electrode connection regions, said LSI region being located on one side of said semiconductor chip;
providing a support portion, a plurality of wiring traces and a plurality of post electrodes, said plurality of wiring traces being connected to said plurality of post electrodes, said support portion being connected to said plurality of wiring traces and said plurality of post electrodes;
connecting said plurality of post electrodes to said electrode connection regions with a plurality of through electrodes and said wiring traces connected to said support portion, wherein a space is defined between said LSI region and said support portion;
applying resin into said space;
disconnecting said support portion from said wiring traces and said plurality of post electrodes after applying said resin, said plurality of wiring traces and said plurality of post electrodes being connected to said LSI region with said support portion disconnected from said wiring traces and said plurality of post electrodes, at least one or more of said wiring traces defining a first external wiring connection on said one side of said semiconductor chip and one or more ends of said through electrodes on another side of said semiconductor chip defining a second external wiring connection on said another side of said semiconductor chip, wherein an insulation tape is provided on a back side of said plurality of post electrodes, at least a portion of said insulation tape defining a portion of said space, said insulation tape being connected to said support portion prior to applying said resin, said insulation tape being separated from said support portion after said resin is applied, wherein said insulation tape forms a protection film of said semiconductor chip after said support portion is separated from said plurality of post electrodes and said wiring traces.
4. A method in accordance with claim 3 , wherein said resin engages said LSI region, said plurality of post electrodes and said wiring traces.