Semiconductor device and manufacturing method of the same

1. A semiconductor device comprising:

a semiconductor substrate having a connection pad;

an external connection electrode provided on the semiconductor substrate to be connected to the connection pad; and

a sealing film provided to cover the external connection electrode,

wherein an opening is provided in the sealing film to expose a center of an upper surface of the external connection electrode, and the sealing film is provided to cover an outer peripheral part of the upper surface of the external connection electrode, and

wherein the opening of the sealing film and the upper surface of the external connection electrode are circular, and a diameter of the opening of the sealing film is smaller than a diameter of the upper surface of the external connection electrode by 10 μm or less.

2. The semiconductor device according to claim 1 , wherein the sealing film is in the form of a single film.

3. The semiconductor device according to claim 1 , wherein an insulating film is provided on the semiconductor substrate, a wiring line is provided on the insulating film to be connected to the connection pad, and the external connection electrode is provided on a land of the wiring line.

4. The semiconductor device according to claim 1 , wherein the upper surface of the sealing film is flat except for the opening.

5. The semiconductor device according to claim 1 , wherein a thickness of the sealing film at the outer peripheral part of the upper surface of the external connection electrode is 10 μm or less.

6. The semiconductor device according to claim 1 , wherein a solder bump is provided in the opening of the sealing film and on the sealing film so that the solder bump is connected to at least the center of the upper surface of the external connection electrode.

7. A semiconductor device manufacturing method comprising:

forming a sealing film to cover a peripheral side surface and an upper surface of an external connection electrode which is formed on a semiconductor substrate to be connected to a connection pad of the semiconductor substrate; and

forming an opening in the sealing film,

wherein the opening is formed in the sealing film so that the opening exposes a center of an upper surface of the external connection electrode and so that the sealing film covers an outer peripheral part of the upper surface of the external connection electrode, and

wherein after the formation of the sealing film, an upper side of the sealing film is ground so that a thickness of the sealing film on the external connection electrode is 10 μm or less, before the formation of the opening in the sealing film.

8. The semiconductor device manufacturing method according to claim 7 , wherein the sealing film is formed into a single film.

9. The semiconductor device manufacturing method according to claim 7 , wherein the opening is formed in the sealing film by laser processing which applies a laser beam.

10. The semiconductor device manufacturing method according to claim 7 , wherein a solder bump is formed in the opening of the sealing film and on the sealing film so that the solder bump is connected to at least the center of the upper surface of the external connection electrode.

11. A semiconductor device manufacturing method comprising:

forming a sealing film to cover a peripheral side surface and an upper surface of an external connection electrode which is formed on a semiconductor substrate to be connected to a connection pad of the semiconductor substrate; and

forming an opening in the sealing film,

wherein the opening is formed in the sealing film so that the opening exposes a center of an upper surface of the external connection electrode and so that the sealing film covers an outer peripheral part of the upper surface of the external connection electrode,

wherein:

the external connection electrode is formed by electrolytic plating using a plating resist film formed on the semiconductor substrate, and

the plating resist film on the semiconductor substrate is detached, and

wherein after the formation of the external connection electrode, an upper part of the external connection electrode and an upper side of the plating resist film are cut off with the plating resist film remaining on the semiconductor substrate, before the detachment of the plating resist film.

12. The semiconductor device manufacturing method according to claim 11 , wherein:

after the upper part of the external connection electrode is cut off by a surface planer, the sealing film is formed to cover the entire upper surface of the external connection electrode, and

before the opening is formed in the sealing film, the sealing film is formed so that the sealing film remains on the entire upper surface of the external connection electrode.

13. The semiconductor device manufacturing method according to claim 11 , wherein the upper part of the external connection electrode and the upper side of the plating resist film are cut by a surface planer and simultaneously removed.

14. A semiconductor device manufacturing method comprising:

forming a sealing film to cover a peripheral side surface and an upper surface of an external connection electrode which is formed on a semiconductor substrate to be connected to a connection pad of the semiconductor substrate; and

forming an opening in the sealing film,

wherein the opening is formed in the sealing film so that the opening exposes a center of an upper surface of the external connection electrode and so that the sealing film covers an outer peripheral part of the upper surface of the external connection electrode,

wherein the opening of the sealing film and the upper surface of the external connection electrode are circular, and the opening is formed in the sealing film so that a diameter of the opening of the sealing film is smaller than a diameter of the external connection electrode by 10 μm or less.