IP Library Granted Patent US 8,617,652
Granted Patent B2
US 8,617,652 · App. 13/536,646 · Granted Dec 31, 2013

Depositing material on fibrous textiles using atomic layer deposition for increasing rigidity and strength

Inventor: Sang In Lee (Sunnyvale, CA)
Assignee: Veeco ALD Inc.
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Quick Facts
Patent No.
US 8,617,652
App. No.
13/536,646
Granted
Dec 31, 2013
Kind
B2
Abstract

Embodiments relate to depositing on one or more layers of materials on a fiber or fiber containing material using atomic layer deposition (ALD) to provide or enhance functionalities of the fibers or fiber containing material. A layer of material is deposited coated on the fibers or fiber containing textile by causing the relative movement between a fiber or the fiber containing textile and a source injector. The surface of the material is oxidized, nitrified or carbonized to increase the volume of the deposited material. By increasing the volume of the material, the material is subject to compressive stress. The compressive stress renders the fibers or the fiber containing material more rigid, stronger and more resistant against bending force, impact or tensile force.

Claims (18)

1. A method of depositing material on a fiber or a fiber containing material, comprising:

injecting source precursor from a source injector onto a portion of the fiber or the fiber containing material;

causing a relative movement between the fiber or the fiber containing material and the source injector;

injecting reactant precursor from a reactant injector onto the portion of the fiber or the fiber containing material to deposit a layer of first material subject to tensile stress by atomic layer deposition (ALD); and

converting at least an outer portion of the layer to a second material having larger volume compared to the first material to induce compressive stress in the layer.

2. The method of claim 1 , wherein the first material comprises polycrystalline material and the conversion comprises oxidizing, nitrifying or carbonizing at least part of grain boundaries and a surface of the polycrystalline material.

3. The method of claim 2 , wherein the polycrystalline material comprises at least one of semiconductor, metal compound or metal.

4. The method of claim 2 , wherein the polycrystalline material comprises TiN.

5. The method of claim 2 , further comprising depositing a layer of amorphous material on the surface of the second material.

6. The method of claim 5 , wherein the amorphous material comprises at least one of Al 2 O 3 or SiO 2 .

7. The method of claim 1 , wherein the reactant precursors comprise radicals generated by exposing gas to plasma.

8. The method of claim 1 , wherein the first material comprises amorphous material and the conversion comprises oxidizing, nitrifying or carbonizing at least part of the first material.

9. The method of claim 8 , wherein the amorphous material comprises at least one of Al 2 O 3 and SiN.

10. A method of depositing material on a fiber or a fiber containing material, comprising:

injecting source precursor from a source injector onto a portion of the fiber or the fiber containing material;

injecting reactant precursor from a reactant injector onto the portion of the fiber or the fiber containing material to deposit a layer of amorphous material subject to tensile stress by atomic layer deposition (ALD); and

converting at least an outer portion of the layer to a second material having larger volume compared to the first material to induce compressive stress in the layer by oxidizing or nitrifying at least the outer portion of the layer.

11. The method of claim 10 , wherein the layer of amorphous material is a layer of amorphous SiN.

Assignments (2)
CHANGE OF NAME Recorded Nov 7, 2013
From: SYNOS TECHNOLOGY, INC.
To: VEECO ALD INC.
Reel/Frame 031599/0531 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 28, 2012
From: LEE, SANG IN
To: SYNOS TECHNOLOGY, INC.
Reel/Frame 028463/0894 →
Continuity (2)
Provisional Application 61511025 · Jul 23, 2011
Related Publication 20130023172A1 · Jan 24, 2013