IP Library Granted Patent US 8,629,521
Granted Patent B2
US 8,629,521 · App. 13/215,584 · Granted Jan 14, 2014

Semiconductor device used for adjustment of output of a hall element

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Quick Facts
Patent No.
US 8,629,521
App. No.
13/215,584
Granted
Jan 14, 2014
Kind
B2
Abstract

A semiconductor device includes a Hall element, which is switched between a first and second mode. In the first mode, connection A between a first and second resistor and connection C between a third and fourth resistor are set to Vcc or GND. Connection D between the first and fourth resistor and connection B between the second and third resistor are set as output terminals. In the second mode, D and B are set to Vcc or GND and A and C are set as output terminals. When a first line placed along the second resistor and connected to A is set at Vcc in the first mode, a second line placed along the fourth resistor and connected to D is set at Vcc in the second mode. When the first line is set at GND in first mode, the second line is set at GND in the second mode.

Claims (56)

1. A semiconductor device comprising:

a Hall element represented by an equivalent circuit in which a first resistive element, a second resistive element, a third resistive element, and a fourth resistive element are sequentially connected in a quadrangular loop,

wherein the semiconductor device is switched between a first mode and a second mode,

wherein, in the first mode, a first connection point between the first resistive element and the second resistive element is set at a ground potential and a second connection point between the third resistive element and the fourth resistive element is set at a power supply potential, and a third connection point between the first resistive element and the fourth resistive element and a fourth connection point between the second resistive element and the third resistive element are set as output terminals, and

wherein, in the second mode, the third connection point is set at the ground potential and the fourth connection point is set at the power supply potential and the first connection point and the second connection point are set as the output terminals, and

wherein, in the first mode, a first line that is located adjacent to the second resistive element and connected to the first connection point is set at the ground potential, and,

wherein, in the second mode, a second line that is located adjacent to the fourth resistive element and connected to the third connection point is set at the ground potential.

2. The semiconductor device according to claim 1 ,

wherein, in the first mode, the first line is set at the ground potential so that the first connection point is set at the ground potential and the second connection point is set at the power supply potential, and

wherein, in the second mode, the second line is set at the ground potential so that the third connection point is set at the ground potential and the fourth connection point is set at the power supply potential.

3. The semiconductor device according to claim 1 ,

wherein, in the first mode, the second line is used as a line for output, and

wherein, in the second mode, the first line is used as the line for output.

4. The semiconductor device according to claim 2 ,

wherein, in the first mode, the second line is used as a line for output, and

wherein, in the second mode, the first line is used as the line for output.

5. The semiconductor device according to claim 1 ,

wherein the first line extends from the first connection point at an angle which is not parallel to any of directions of extension of the first resistive element, the second resistive element, the third resistive element, and the fourth resistive element, and

wherein the second line extends from the third connection point at an angle which is not parallel to any of the directions of extension of the first resistive element, the second resistive element, the third resistive element, and the fourth resistive element.

6. The semiconductor device according to claim 2 ,

wherein the first line extends from the first connection point at an angle which is not parallel to any of directions of extension of the first resistive element, the second resistive element, the third resistive element, and the fourth resistive element, and

wherein the second line extends from the third connection point at an angle which is not parallel to any of the directions of extension of the first resistive element, the second resistive element, the third resistive element, and the fourth resistive element.

7. The semiconductor device according to claim 3 ,

wherein the first line extends from the first connection point at an angle which is not parallel to any of directions of extension of the first resistive element, the second resistive element, the third resistive element, and the fourth resistive element, and

wherein the second line extends from the third connection point at an angle which is not parallel to any of the directions of extension of the first resistive element, the second resistive element, the third resistive element, and the fourth resistive element.

8. A semiconductor device comprising:

a Hall element represented by an equivalent circuit in which a first resistive element, a second resistive element, a third resistive element, and a fourth resistive element are sequentially connected in a quadrangular loop,

wherein the semiconductor device is switched between a first mode and a second mode,

wherein, in the first mode, a first connection point between the first resistive element and the second resistive element is set at a power supply potential and a second connection point between the third resistive element and the fourth resistive element is set at a ground potential, and a third connection point between the first resistive element and the fourth resistive element and a fourth connection point between the second resistive element and the third resistive element are set as output terminals, and

wherein, in the second mode, the third connection point is set at the power supply potential and the fourth connection point is set at the ground potential and the first connection point and the second connection point are set as the output terminals, and

wherein, in the first mode, a first line that is located adjacent to the second resistive element and connected to the first connection point is set at the power supply potential, and

wherein, in the second mode, a second line that is located adjacent to the fourth resistive element and connected to the third connection point is set at the power supply potential.

9. The semiconductor device according to claim 8 ,

wherein, in the first mode, the first line is set at the power supply potential so that the first connection point is set at the power supply potential and the second connection point is set at the ground potential, and

wherein, in the second mode, the second line is set at the power supply potential so that the third connection point is set at the power supply potential and the fourth connection point is set at the ground potential.

10. The semiconductor device according to claim 8 ,

wherein, in the first mode, the second line is used as a line for output, and

wherein, in the second mode, the first line is used as the line for output.

11. The semiconductor device according to claim 9 ,

wherein, in the first mode, the second line is used as a line for output, and

wherein, in the second mode, the first line is used as the line for output.

12. The semiconductor device according to claim 8 ,

wherein the first line extends from the first connection point at an angle which is not parallel to any of directions of extension of the first resistive element, the second resistive element, the third resistive element, and the fourth resistive element, and

wherein the second line extends from the third connection point at an angle which is not parallel to any of the directions of extension of the first resistive element, the second resistive element, the third resistive element, and the fourth resistive element.

13. The semiconductor device according to claim 9 ,

wherein the first line extends from the first connection point at an angle which is not parallel to any of directions of extension of the first resistive element, the second resistive element, the third resistive element, and the fourth resistive element, and

wherein the second line extends from the third connection point at an angle which is not parallel to any of the directions of extension of the first resistive element, the second resistive element, the third resistive element, and the fourth resistive element.

14. The semiconductor device according to claim 10 ,

wherein the first line extends from the first connection point at an angle which is not parallel to any of directions of extension of the first resistive element, the second resistive element, the third resistive element, and the fourth resistive element, and

wherein the second line extends from the third connection point at an angle which is not parallel to any of the directions of extension of the first resistive element, the second resistive element, the third resistive element, and the fourth resistive element.

15. A semiconductor device configured to perform a process in response to a Hall element represented by an equivalent circuit in which a first resistive element, a second resistive element, a third resistive element, and a fourth resistive element are sequentially connected in a quadrangular loop,

wherein the semiconductor device is switched between a first mode and a second mode,

wherein, in the first mode, a first connection point between the first resistive element and the second resistive element is set at a ground potential and a second connection point between the third resistive element and the fourth resistive element is set at a power supply potential, and a third connection point between the first resistive element and the fourth resistive element and a fourth connection point between the second resistive element and the third resistive element are set as output terminals, and

wherein, in the second mode, the third connection point is set at the ground potential and the fourth connection point is set at the power supply potential and the first connection point and the second connection point are set as the output terminals, and

wherein, in the first mode, a first line that is located adjacent to the second resistive element and connected to the first connection point, and,

wherein, in the second mode, a second line that is located adjacent to the fourth resistive element and connected to the third connection point is set at the ground potential.

Assignments (5)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 038620, FRAME 0087 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064070/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT PATENT NUMBER 5859768 AND TO RECITE COLLATERAL AGENT ROLE OF RECEIVING PARTY IN THE SECURITY INTEREST PREVIOUSLY RECORDED ON REEL 038620 FRAME 0087. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Aug 25, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 039853/0001 →
SECURITY INTEREST Recorded Apr 15, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 038620/0087 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 24, 2014
From: ON SEMICONDUCTOR TRADING SARL
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 032035/0470 →
CHANGE OF NAME Recorded Jan 23, 2014
From: ON SEMICONDUCTOR TRADING, LTD.
To: ON SEMICONDUCTOR TRADING SARL
Reel/Frame 032143/0286 →