Semiconductor device manufacture in which minimum wiring pitch of connecting portion wiring layer is less than minimum wiring pitch of any other wiring layer
A semiconductor device includes a core substrate, and at least one insulating layer and at least one wiring layer that are disposed on a first surface and a second, opposite surface of the substrate. The semiconductor device includes a via disposed in the insulating layer and in the core substrate, and which connects the wiring layers to one another. The semiconductor device includes a semiconductor element mounted on the first surface, forming an electrode terminal that faces up. The semiconductor device includes a connecting portion that penetrates the insulating layer and directly connects the electrode terminal of the semiconductor element and the wiring layer on the first surface. A minimum wiring pitch of this wiring that of any wiring layer on the second surface.
1. A semiconductor device comprising:
a core substrate;
at least one insulating layer and at least one wiring layer which are disposed on each of a first surface of said core substrate and a second surface opposite to said first surface;
a via(s) which is disposed in each of said insulating layer and said core substrate, and connects said wiring layers to each other;
a semiconductor element, mounted on said first surface of said core substrate, with a surface for forming an electrode terminal(s) facing up; and
a connecting portion(s) which penetrates the insulating layer disposed on said first surface and directly connects the electrode terminal of said semiconductor element and the wiring layer disposed on said first surface,
wherein a minimum wiring pitch of the wiring layer directly connected to said connecting portion is smaller than that of any of the wiring layer(s) disposed on said second surface.
2. The semiconductor device according to claim 1 , wherein a shape of each of the via(s) disposed on said second surface is larger than a shape of said connecting portion.
3. The semiconductor device according to claim 1 , wherein a top diameter, a bottom diameter, and a height of each of the via(s) disposed on said second surface are larger than a top diameter, a bottom diameter, and a height of said connecting portion, respectively.
4. The semiconductor device according to claim 1 , wherein a volume of each of the via(s) disposed on said second surface is three times or more of that of said connecting portion.
5. The semiconductor device according to claim 1 , wherein a thickness of the wiring layer directly connected to said connecting portion is thinner than that of any of the wiring layer(s) disposed on said second surface.
6. The semiconductor device according to claim 1 , wherein a thickness, a minimum wiring width, and a minimum wiring interval (distance) of each of the wiring layer(s) disposed on said second surface are one and a half times or more of a thickness, a minimum wiring width, and a minimum wiring interval of the wiring layer(s) directly connected to said connecting portion, respectively.
7. The semiconductor device according to claim 1 , wherein a material of the insulating layer around said connecting portion is different from a material of the insulating layer not including said connecting portion.
8. The semiconductor device according to claim 1 , wherein the insulating layer around said connecting portion is made of a photosensitive resin, and the insulating layer disposed on said second surface is made of a nonphotosensitive resin.
9. The semiconductor device according to claim 1 , wherein a coefficient of elasticity of the insulating layer around said connecting portion is lower than that of the insulating layer not including said connecting portion.
10. The semiconductor device according to claim 1 , wherein said connecting portion does not include a solder material and a resin component.
11. The semiconductor device according to claim 1 , wherein the insulating layer and the wiring layer of said second surface are a single layer, respectively.
12. The semiconductor device according to claim 1 , wherein the insulating layer and the wiring layer of said first surface are a single layer, respectively.
13. The semiconductor device according to claim 1 , wherein an external electrode(s) is disposed on each outermost wiring layer of said first surface and said second surface.
14. The semiconductor device according to claim 13 , wherein a minimum pitch of said connecting portion is narrower than that of said external electrodes.
15. The semiconductor device according to claim 13 , further comprising an electronic component connected to said external electrode.
16. The semiconductor device according to claim 1 , wherein a recessed portion is provided on said first surface of said core substrate, and said semiconductor element is mounted in said recessed portion.
17. The semiconductor device according to claim 1 , wherein a plurality of semiconductor elements are mounted on said first surface of said core substrate with a surface for forming element facing up.
18. The semiconductor device according to claim 1 , wherein a reinforcement material is disposed in at least one insulating layer among said a plurality of insulating layers.