Circuit member, manufacturing method for circuit members, semiconductor device, and surface lamination structure for circuit member

1. A circuit member including a frame substrate, formed by patterning a rolled copper plate or a rolled copper alloy plate, with a die pad for a semiconductor chip to be mounted thereon, and a lead for an electrical connection to the semiconductor chip, comprising:

rough surfaces formed on upper sides and lateral wall sides of the die pad itself and the lead itself;

smooth surfaces formed on lower sides of the die pad and the lead; and

metallic skins formed on the rough surfaces of the die pad and the lead,

wherein a part of the upper surface of the lead to be brought into contact with a resin sealing mold is selectively a smooth surface.

2. A circuit member including a frame substrate, formed by patterning a rolled copper plate or a rolled copper alloy plate, with a die pad for a semiconductor chip to be mounted thereon, and a lead for an electrical connection to the semiconductor chip, comprising:

smooth surfaces formed on a portion of an upper side of the die pad and on a portion of an upper side of the lead to be connected to a bonding wire;

metallic skins on the smooth surfaces;

solder skins on entire lower sides of the die pad and the lead; and

rough surfaces formed on regions of the die pad itself and the lead itself except for the lower sides of the die pad and the lead and regions where the metallic skins are formed,

wherein the die pad and the lead are configured to be buried in a sealing resin so as to expose the lower sides of the die pad and the lead, and the rough surfaces formed on the regions the die pad itself and the lead itself are in direct contact with the sealing resin.

3. The circuit member as claimed in claim 2 , wherein the metallic skins comprise an Ag skin.

4. The circuit member as claimed in claim 3 , wherein the Ag skin has a thickness within a range of 2 to 15 μm.

5. The circuit member as claimed in claim 2 , wherein the metallic skins comprise a Ni skin and a Pd skin laminated in order on the rolled copper plate.

6. The circuit member as claimed in claim 5 , wherein the Ni skin has a thickness within a range of 0.5 to 2 μm, and the Pd skin has a thickness within a range of 0.005 to 0.2 μm.

7. The circuit member as claimed in claim 2 , wherein the metallic skins comprise a Ni skin, a Pd skin, and an Au skin laminated in order on the rolled copper plate.

8. The circuit member as claimed in claim 7 , wherein the Ni skin has a thickness within a range of 0.5 to 2 μm, the Pd skin has a thickness within a range of 0.005 to 0.2 μm, and the Au skin has a thickness within a range of 0.003 to 0.01 μm.

9. The circuit member as claimed in claim 2 , wherein the rough surface has a surface roughness (Ra) of 0.3 μm or more.

10. The circuit member as claimed in claim 2 , further comprising:

other metallic skins formed on the rough surfaces of the die pad and the lead,

wherein the rough surfaces are treated by a micro-etching solution having hydrogen peroxide and sulfuric acid, and

the metallic skins have needle-shaped projections to secure surface profiles of the rough surfaces.

11. The circuit member as claimed in claim 2 , wherein the semiconductor chip is mounted on the smooth surface of the upper side of the die pad.

12. A semiconductor device comprising:

a circuit member composed of a rolled copper plate or a rolled copper alloy plate, comprising:

a die pad and a lead;

rough surfaces formed on upper sides and lateral wall sides of the die pad itself and the lead itself;

smooth surfaces formed on lower sides of the die pad and the lead; and

a metallic skin on the rough surfaces;

a semiconductor chip mounted on an upper side of the die pad;

a bonding wire interconnecting the semiconductor chip and the lead; and

an electrically insulating sealing resin configured to have the circuit member, the semiconductor chip, and the bonding wire sealed in, with a lower side of the lead exposed,

wherein a part of the upper surface of the lead to be brought into contact with a resin sealing mold is selectively a smooth surface.

13. A semiconductor device comprising:

a circuit member composed of a rolled copper plate or a rolled copper alloy plate, comprising:

a die pad and a lead;

smooth surfaces formed on a portion of an upper side of the die pad, and on a portion of an upper side of the lead to be connected to a bonding wire;

metallic skins on the smooth surfaces;

solder skins on entire lower sides of the die pad and the lead; and

rough surfaces formed on regions of the die pad itself and the lead itself except for lower sides of the die pad and the lead and regions where the metallic skins are formed;

a semiconductor chip mounted on the upper side of the die pad;

the bonding wire interconnecting the semiconductor chip and the lead; and

an electrically insulating sealing resin configured to have the circuit member, the semiconductor chip, and the bonding wire sealed in, with the lower side of the lead exposed, and the rough surfaces formed on the regions of the die pad itself and the lead itself are in direct contact with the sealing resin.

14. The semiconductor device as claimed in claim 13 , further comprising:

other metallic skins formed on the rough surfaces of the die pad and the lead,

wherein the rough surfaces are treated by a micro-etching solution having hydrogen peroxide and sulfuric acid, and

the metallic skins have needle-shaped projections to secure surface profiles of the rough surfaces.

15. The circuit member as claimed in claim 13 , wherein the semiconductor chip is mounted on the smooth surface of the upper side of the die pad.