Methods and apparatuses for energetic neutral flux generation for processing a substrate
Apparatuses and methods for processing substrates are disclosed. A processing apparatus includes a chamber for generating a plasma therein, an electrode associated with the chamber, and a signal generator coupled to the electrode. The signal generator applies a DC pulse to the electrode with sufficient amplitude and sufficient duty cycle of an on-time and an off-time to cause events within the chamber. A plasma is generated from a gas in the chamber responsive to the amplitude of the DC pulse. Energetic ions are generated by accelerating ions of the plasma toward a substrate in the chamber in response to the amplitude of the DC pulse during the on-time. Some of the energetic ions are neutralized to energetic neutrals in response to the DC pulse during the off-time. Some of the energetic neutrals impact the substrate with sufficient energy to cause a chemical reaction on the substrate.
1. A method of treating a substrate, comprising:
forming a plasma in a processing chamber by applying a DC voltage to an electrode associated with the processing chamber but electrically decoupled from the substrate, the DC voltage of sufficient amplitude to cause the plasma to form;
accelerating ions of the plasma to become energetic ions moving toward the substrate disposed in the processing chamber by maintaining the DC voltage on the electrode for a first duration;
neutralizing at least some of the energetic ions to generate energetic neutrals moving toward the substrate by removing the DC voltage from the electrode for a second duration sufficient to:
enable the at least some of the energetic ions to be neutralized by combining with electrons before reaching the substrate; and
retain a kinetic energy of the energetic neutrals toward the substrate; and
impacting the substrate with at least some of the energetic neutrals.
2. The method of claim 1 , wherein the plasma is formed from a reactive gas to generate energetic reactive neutrals.
3. The method of claim 1 , wherein the plasma is formed from an inert gas to generate energetic inert neutrals.
4. The method of claim 1 , further comprising:
applying a ground voltage to the processing chamber; and
applying a second pulsed DC signal to the substrate wherein a pulse amplitude of the second pulsed DC signal is negative relative to the ground voltage.
5. The method of claim 1 , wherein the impacting the substrate causes a reaction with a material on a surface of the substrate to perform an atomic layer etch of the material.
6. The method of claim 5 , wherein the forming, accelerating, neutralizing, and impacting are sequentially repeated until the reaction is sufficient to remove a predetermined amount of the material, a predetermined time period has elapsed, or a combination thereof.
7. A method of treating a substrate, comprising:
forming a reactive film on a surface of a substrate disposed in a processing chamber from a reactive gas introduced into the processing chamber;
forming a plasma from an inert gas introduced in the processing chamber with a DC voltage applied to an electrode associated with the processing chamber but electrically decoupled from the substrate, the DC voltage of sufficient amplitude to cause the plasma to form;
accelerating ions of the plasma to become energetic inert ions moving toward the substrate by maintaining the DC voltage on the electrode for a first duration;
neutralizing at least some of the energetic inert ions by removing the DC voltage from the electrode for a second duration sufficient to enable the at least some of the energetic inert ions to be neutralized by combining with electrons before reaching the substrate to generate energetic inert neutrals moving toward the substrate; and
impacting the substrate with at least some of the energetic inert neutrals;
wherein a combination of the first duration and the second duration is sufficient to retain a kinetic energy of the energetic inert neutrals toward the substrate.
8. The method of claim 7 , wherein the impacting the substrate causes a reaction of the reactive film with a material on the surface of the substrate to remove a portion of the material.
9. The method of claim 7 , further comprising repeating the forming, accelerating, neutralizing and impacting to achieve a desired etching amount of a material on the surface of the substrate.
10. The method of claim 7 , further comprising:
applying a ground voltage to the processing chamber; and
applying a second pulsed DC signal to the substrate wherein a pulse amplitude of the second pulsed DC signal is negative relative to the ground voltage.
11. A method of treating a substrate, comprising:
forming a physisorbed inert species on a surface of a substrate disposed in a processing chamber;
forming a plasma from an inert gas introduced in the processing chamber with a DC voltage applied to an electrode associated with the processing chamber but electrically decoupled from the substrate the DC voltage of sufficient amplitude to cause the plasma to form;
accelerating ions of the plasma to become energetic inert ions moving toward the substrate by maintaining the DC voltage on the electrode for a first duration;
neutralizing at least some of the energetic inert ions by removing the DC voltage from the electrode for a second duration sufficient to enable the at least some of the energetic inert ions to be neutralized by combining with electrons before reaching the substrate to generate energetic inert neutrals moving toward the substrate; and
impacting the substrate with at least some of the energetic inert neutrals;
wherein a combination of the first duration and the second duration is sufficient to retain a kinetic energy of the energetic inert neutrals toward the substrate.
12. The method of claim 11 , wherein the impacting the substrate causes a reaction with the physisorbed inert species to cause the physisorbed inert species to become reactive and react with a material underlying the physisorbed inert species and to cause an atomic layer etch of the material.