Etch rate detection for anti-reflective coating layer and absorber layer etching
A method and apparatus for etching a photomask substrate with enhanced process monitoring is provided. In one embodiment, a method of determining an etching endpoint includes performing an etching process on a first tantalum containing layer through a patterned mask layer, directing a radiation source having a first wavelength from about 200 nm and about 800 nm to an area uncovered by the patterned mask layer, collecting an optical signal reflected from the area covered by the patterned mask layer, analyzing a waveform obtained the reflected optical signal reflected from the substrate from a first time point to a second time point, and determining a first endpoint of the etching process when a slope of the waveform is changed about 5 percent from the first time point to the second time point.
1. A method of determining an etching endpoint of a tantalum containing layer disposed on a substrate during an etching process, comprising:
performing an etching process on a first tantalum containing layer disposed on a second tantalum containing layer disposed on a first surface of a substrate through a patterned mask layer in a plasma etch chamber;
directing radiation having a first wavelength from between about 200 nm and about 800 nm to an area of the first tantalum containing layer uncovered by the patterned mask layer during the etching process;
collecting an optical signal reflected from the area uncovered by the patterned mask layer;
analyzing a waveform obtained from the reflected optical signal; and
determining a first endpoint of the etching process when a slope of the waveform changes by about 5 percent or greater; and
continuing collecting the optical signal reflected from the area uncovered by the patterned mask layer after the first endpoint of the etching process is determined.
2. The method of claim 1 , wherein the first substrate is a photomask reticle.
3. The method of claim 1 , wherein analyzing the waveform further comprises:
obtaining a first spectrum in a reflective form plotted as a function of time from the reflected optical signal.
4. The method of claim 1 , wherein the first tantalum containing layer is a TaSiON layer, a TaBO layer, or a TaON layer.
5. The method of claim 1 , wherein the first wavelength is about 220 nm.
6. The method of claim 1 , wherein continuing collecting the optical signal reflected from the area uncovered by the patterned mask layer further comprises:
continuing collecting the optical signal reflected from the second tantalum containing layer after the first tantalum containing layer uncovered by the patterned mask is removed.
7. The method of claim 6 , wherein the second tantalum containing layer is a TaSi layer, a TaBN layer, or a TaN layer.
8. The method of claim 6 , a reflective multi-material layer is disposed between the second tantalum containing layer and the substrate.
9. The method of claim 8 , wherein the reflective multi-material layer include at least one molybdenum layer and a silicon layer.
10. The method of claim 6 , further comprising:
etching the second tantalum containing layer disposed between the substrate and the first tantalum containing layer; and
continuing collecting the optical signal reflected by directing radiation having a second wavelength of about 200 nm and about 800 nm while etching the second tantalum containing layer through the area uncovered by the patterned mask layer.
11. The method of claim 10 , further comprising:
determining a second endpoint for etching the second tantalum containing layer when a slope of the second waveform changes about 5 percent.
12. The method of claim 10 , wherein the second wavelength is about 230 nm.