IP Library Granted Patent US 8,916,938
Granted Patent B2
US 8,916,938 · App. 14/179,559 · Granted Dec 23, 2014

Three-dimensional writable printed memory

Inventor: Guobiao Zhang (Corvallis, OR)
Assignees: ChengDu HaiCun IP Technology LLC; Guobiao Zhang
H01L21/268H01L27/11206
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Quick Facts
Patent No.
US 8,916,938
App. No.
14/179,559
Granted
Dec 23, 2014
Kind
B2
Abstract

The present invention discloses a three-dimensional writable printed memory (3D-wP). It comprises at least a printed memory array and a writable memory array. The printed memory array stores contents data, which are recorded with a printing means; the writable memory array stores custom data, which are recorded with a writing means. The writing means is preferably direct-write lithography. To maintain manufacturing throughput, the total amount of custom data should be less than 1% of the total amount of content data.

Claims (13)

1. A method of making a three-dimensional writable printed memory (3D-wP), comprising the steps of:

1) forming a substrate circuit on a semiconductor substrate;

2) recording custom data using a direct-write lithography;

3) recording content data into a plurality of vertically stacked memory levels above said substrate using a printing means, wherein said memory levels are stacked above and coupled to said substrate;

wherein the total amount of said custom data is less than 1% of the total amount of said content data.

2. The method according to claim 1 , wherein said direct-write lithography is e-beam lithography.

3. The method according to claim 1 , wherein said direct-write lithography is laser-beam lithography.

4. The method according to claim 1 , wherein said direct-write lithography is focused ion-beam lithography.

5. The method according to claim 1 , wherein said printing means is photo-lithography.

6. The method according to claim 1 , wherein said printing means is imprint-lithography.

7. The method according to claim 1 , wherein step 3) is performed during step 2).

8. The method according to claim 1 , wherein step 3) is performed before step 2).

9. The method according to claim 1 , wherein the minimum feature size of the data-coding layer of said writable memory array is larger than the minimum feature size of the data-coding layer of said memory levels.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 23, 2025
From: ZHANG, GUOBIAO, DR.
To: CHENGDU HAICUN IP TECHNOLOGY LLC
Reel/Frame 070916/0986 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 22, 2014
From: ZHANG, GUOBIAO
To: HANGZHOU HAICUN INFORMATION TECHNOLOGY CO., LTD.
Reel/Frame 033785/0730 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 22, 2014
From: HANGZHOU HAICUN INFORMATION TECHNOLOGY CO., LTD.
To: CHENGDU HAICUN IP TECHNOLOGY LLC
Reel/Frame 033785/0826 →
Continuity (3)
Division 13599112 · Aug 30, 2012
Provisional Application 61529922 · Sep 1, 2011
Related Publication 20140179124A1 · Jun 26, 2014