Vertical memory cell string with dielectric in a portion of the body
Some embodiments include a memory cell string having a body having a channel extending therein and in contact with a source/drain, a select gate adjacent to the body, a plurality of access lines adjacent to the body, and a dielectric in a portion of the body between the source/drain and a level corresponding to an end of the plurality of access lines most adjacent to the select gate. The dielectric in the portion of the body does not extend along an entire length of the body. Other embodiments are described and claimed.
1. A memory cell string, comprising:
a body having a channel extending therein and in contact with a source/drain;
a select gate adjacent to the body;
a plurality of access lines adjacent to the body; and
a dielectric in a portion of the body between the source/drain and a level corresponding to an end of the plurality of access lines most adjacent to the select gate, wherein the dielectric in the portion of the body does not extend along an entire length of the body.
2. The memory cell string of claim 1 , wherein the dielectric in the portion of the body is adjacent to a corner of the select gate.
3. The memory cell string of claim 1 , wherein the dielectric in the portion of the body does not contact the source/drain.
4. The memory cell string of claim 1 , wherein the dielectric in the portion of the body is disposed apart from a side of the body by a distance of between about 5 nm to about 15 nm.
5. The memory cell string of claim 1 , wherein the body comprises a pillar of semiconductor material.
6. The memory cell string of claim 1 , wherein the plurality of access lines comprise a plurality of word lines.
7. The memory cell string of claim 1 , further comprising a plurality of storage elements adjacent to the body.
8. The memory cell string of claim 7 , wherein at least some of the plurality of storage elements comprise floating gates comprising poly-silicon and/or metal.
9. The memory cell string of claim 1 , wherein the body comprises a vertical body.
10. The memory cell string of claim 1 , wherein a dielectric in a portion of the body between the source/drain and a level corresponding to an end of the plurality of access lines most adjacent to the select gate comprises a dielectric in a portion of the body that does not extend past an upper extent of a portion of the select gate.
11. The memory cell string of claim 10 , wherein the dielectric in the portion of the body also does not extend past a lower extent of the portion of the select gate.
12. The memory cell string of claim 1 , wherein a dielectric in a portion of the body between the source/drain and a level corresponding to an end of the plurality of access lines most adjacent to the select gate does not extend past a lower extent of a portion of the select gate.
13. The memory cell string of claim 12 , wherein the dielectric in the portion of the body also does not extend past an upper extent of the portion of the select gate.
14. The memory cell string of claim 1 , wherein the dielectric comprises an oxide.
15. The memory cell string of claim 1 , wherein the dielectric comprises a nitride.
16. The memory cell string of claim 10 , wherein the dielectric in the portion of the body extends past a lower extent of the portion.
17. The memory cell string of claim 1 , further comprising a spacer between the select gate and the plurality of access lines.
18. The memory cell string of claim 1 , further comprising:
a gate oxide between the select gate and a side of the vertical body.
19. The memory cell string of claim 1 , wherein the source/drain comprises a first source/drain, and wherein the channel also contacts a second source/drain.
20. A memory device, comprising:
a string of memory cells comprising:
a body having a channel extending therein and in contact with a source/drain;
a select gate adjacent to the body;
a plurality of access lines adjacent to the body; and
a dielectric in a portion of the body between the source/drain and a level corresponding to an end of the plurality of access lines most adjacent to the select gate, wherein the dielectric in the portion of the body does not extend along an entire length of the body.
21. The memory device of claim 20 , wherein the dielectric in the portion of the body is adjacent to a corner of the select gate.
22. The memory device of claim 20 , wherein the dielectric in the portion of the body does not contact the source/drain.
23. The memory device of claim 20 , wherein the string of memory cells comprises a NAND string of memory cells.
24. The memory device of claim 20 , wherein the string of memory cells comprises a string of floating gate memory cells.
25. The memory device of claim 20 , wherein the string of memory cells comprise a string of SONOS memory cells.
26. The memory device of claim 20 , wherein the string of memory cells comprise a string of MONOS memory cells.
27. The memory device of claim 20 , wherein the dielectric in the portion of the body is adjacent to a corner of the access line of the plurality of access lines most adjacent to the select gate.
28. A system including a memory device, wherein the memory device comprises a string of memory cells, the string of memory cells comprising:
a body having a channel extending therein and in contact with a source/drain;
a select gate adjacent to the body;
a plurality of access lines adjacent to the body; and
a dielectric in a portion of the body between the source/drain and a level corresponding to an end of the plurality of access lines most adjacent to the select gate, wherein the dielectric in the portion of the body does not extend along an entire length of the body.