Elongated bumps in integrated circuit devices
A device includes a substrate, a metal pad over the substrate, and a passivation layer covering edge portions of the metal pad. The passivation layer has a first opening overlapping the metal pad, wherein the first opening has a first lateral dimension measured in a direction parallel to a major surface of the substrate. A polymer layer is over the passivation layer and covering the edge portions of the metal pad. The polymer layer has a second opening overlapping the metal pad. The second opening has a second lateral dimension measured in the direction. The first lateral dimension is greater than the second lateral dimension by more than about 7 μm. A Under-Bump metallurgy (UBM) includes a first portion in the second opening, and a second portion overlying portions of the polymer layer.
1. A device comprising:
a substrate;
a metal pad over the substrate;
a passivation layer covering edge portions of the metal pad, wherein the passivation layer comprises a first opening overlapping the metal pad, and wherein the first opening has a first lateral dimension measured in a direction parallel to a major surface of the substrate;
a polymer layer over the passivation layer and covering the edge portions of the metal pad, wherein the polymer layer comprises a second opening overlapping the metal pad, wherein the second opening has a second lateral dimension measured in the direction, and wherein the first lateral dimension is greater than the second lateral dimension by more than about 7 μm;
a Under-Bump metallurgy (UBM) comprising a first portion in the second opening, and a second portion overlying portions of the polymer layer; and
a metal pillar over the UBM, wherein the metal pillar is formed of a non-solder metallic material, and wherein the metal pillar comprises vertical edges substantially perpendicular to a top surface of the metal pad.
2. The device of claim 1 , wherein the UBM has a third lateral dimension measured in the direction, and wherein the first lateral dimension is smaller than the third lateral dimension by more than about 2 μm.
3. The device of claim 1 further comprising a solder region over the metal pillar, with the solder region comprising a rounded top surface.
4. The device of claim 3 , wherein the metal pad, the passivation layer, the polymer layer, and the UBM are comprised in a device die, and wherein the metal pillar is bonded to a metal trace of a package substrate through a bump-on-trace bond, wherein the solder region bonding the metal pillar to the metal trace is in contact with opposite sidewalls of the metal trace.
5. The device of claim 1 , wherein the UBM has an elongated top-view shape and comprises a length and a width smaller than the length, and wherein the direction is parallel to a lengthwise direction of the UBM.
6. The device of claim 1 , wherein the UBM has an elongated top-view shape and comprises a length and a width smaller than the length, and wherein the direction is parallel to a widthwise direction of the UBM.
7. The device of claim 1 , wherein the first opening, the second opening, and the UBM have elongated top-view shapes.
8. A device comprising:
a substrate;
a metal pad over the substrate;
a passivation layer covering edge portions of the metal pad, wherein the passivation layer comprises a first opening overlapping the metal pad, and wherein the first opening has a first lateral dimension measured in a direction parallel to a major surface of the substrate;
a polymer layer over the passivation layer and covering the edge portions of the metal pad, wherein the polymer layer comprises a second opening overlapping the metal pad;
a Under-Bump metallurgy (UBM) comprising a first portion in the second opening, and a second portion overlying portions of the polymer layer, wherein the UBM has a second lateral dimension measured in the direction, and wherein the first lateral dimension is smaller than the second lateral dimension by more than about 2 μm; and
a metal pillar over the UBM, wherein edges of the metal pillar are aligned to respective edges of the UBM, and wherein the metal pillar is formed of a non-solder metallic material.
9. The device of claim 8 , wherein the second opening has a third lateral dimension measured in the direction, and wherein the first lateral dimension is greater than the third lateral dimension by more than about 7 μm.
10. The device of claim 8 , wherein the metal pad, the passivation layer, the polymer layer, and the UBM are comprised in a device die, and wherein the metal pillar is bonded to a metal trace of a package substrate through a bump-on-trace bonding, wherein a solder region bonding the metal pillar to the metal trace is in contact with opposite sidewalls of the metal trace.
11. The device of claim 8 , wherein the UBM has an elongated top-view shape with a length and a width smaller than the length, and wherein the direction is parallel to a lengthwise direction of the UBM.
12. The device of claim 8 , wherein the UBM has an elongated top-view shape with a length and a width smaller than the length, and wherein the direction is parallel to a widthwise direction of the UBM.
13. The device of claim 8 , wherein the first opening, the second opening, and the UBM have elongated top-view shapes.
14. A device comprising:
a substrate;
a metal pad over the substrate;
a passivation layer covering edge portions of the metal pad, wherein the passivation layer comprises a first opening, with a portion of the metal pad being disposed underlying the first opening, and wherein the first opening has a first length and a first width measured in a first direction and a second direction, with the first and the second directions parallel to a major surface of the substrate;
a polymer layer over the passivation layer and covering the passivation layer, wherein the polymer layer comprises a second opening, with the portion of the metal pad being disposed underlying the second opening, wherein the second opening has a second length and a second width measured in the first direction and the second direction, respectively, and wherein the first length is greater than the second length by more than about 7 μm, and the first width is greater than the second width by more than about 7 μm;
a Under-Bump metallurgy (UBM) comprising a first portion in the second opening, and a second portion over a portion of the polymer layer, wherein the UBM has a third length and a third width measured in the first direction and the second direction, respectively, and wherein the first length is smaller than the third length by more than about 2 μm, and the first width is smaller than the third width by more than about 2 μm; and
a metal pillar over the UBM, wherein edges of the metal pillar are aligned to respective edges of the UBM, and wherein the metal pillar is formed of a non-solder metallic material.
15. The device of claim 14 , wherein the first, the second, and the third lengths are greater than the first, the second, and the third widths, respectively.
16. The device of claim 14 further comprises a low-k dielectric layer underlying the metal pad.
17. The device of claim 14 , wherein the UBM comprises copper.
18. The device of claim 14 , wherein the metal pad, the passivation layer, the polymer layer, and the UBM are comprised in a device die, and wherein the metal pillar is bonded to a metal trace of a package substrate through a bump-on-trace bond, wherein a solder region bonding the metal pillar to the metal trace is in contact with opposite sidewalls of the metal trace.