Method of manufacturing porous insulating film

1. A method of manufacturing a porous insulating film comprising:

forming an insulating film over a substrate by introducing a cyclic siloxane compound including a cyclic siloxane as a skeleton and including at least one volatile hydrocarbon group bonded to a side chain, a silicon-containing compound and an oxidizing agent gas, into a plasma; and

converting said insulating film to a porous insulating film by adding energy to said insulating film by using heat, light or charged particles,

wherein said silicon-containing compound is decomposed using less energy as compared with energy to decompose the skeleton of said cyclic siloxane compound, said volatile hydrocarbon group, and the bond between said cyclic siloxane compound and said volatile hydrocarbon group.

2. The method of manufacturing a porous insulating film as set forth in claim 1 ,

wherein said step of converting said insulating film to said porous insulating film includes forming said porous insulating film by volatilizing said volatile hydrocarbon group contained in said insulating film.

3. The method of manufacturing a porous insulating film as set forth in claim 1 ,

wherein said volatile hydrocarbon group is one selected from the group consisting of the following (a) to (f):

(a) at least one cyclic hydrocarbon including a cyclic structure, represented by the formula:

C n H 2n

(wherein n is 4 to 14; a number of carbon atoms in the cyclic structure is 4 to 10; and this at least one cyclic hydrocarbon may include a plurality of simple or branched hydrocarbons substituted at the cyclic structure);

(b) at least one linear or branched, saturated or mono- or polyunsaturated hydrocarbon represented by the formula:

C n H (2n+2)−2y

(wherein n is 2 to 20; and y is 0 to n);

(c) at least one mono- or polyunsaturated cyclic hydrocarbon including a cyclic structure, represented by the formula:

C n H 2n-2x

(wherein x is the number of unsaturation sites; n is 4 to 14; the number of carbon atoms in the cyclic structure is 4 to 10; and this at least one mono- or polyunsaturated cyclic hydrocarbon may include a plurality of simple or branched hydrocarbon substituents substituted at the cyclic structure, and may include unsaturation in one of those hydrocarbon substituents or unsaturation within the ring);

(d) at least one bicyclic hydrocarbon including a bicyclic structure, represented by the formula:

C n H 2n−2

(wherein n is 4 to 14; a number of carbon atoms in the bicyclic structure is 4 to 12; and this at least one bicyclic hydrocarbon may include a plurality of simple or branched hydrocarbons substituted at the bicyclic structure);

(e) at least one polyunsaturated bicyclic hydrocarbon including a bicyclic structure, represented by the formula:

C n H 2n−(2+2x)

(wherein x is the number of unsaturation sites; n is 4 to 14; the number of carbon atoms in the bicyclic structure is 4 to 12; and this at least one polyunsaturated bicyclic hydrocarbon may include a plurality of simple or branched hydrocarbon substituents substituted at the bicyclic structure, and may include unsaturation in one of those hydrocarbon substituents or unsaturation within the ring); and

(f) at least one tricyclic hydrocarbon including a tricyclic structure, represented by the formula:

CnH 2 n− 4

(wherein n is 4 to 14; the number of carbon atoms in the tricyclic structure is 4 to 12; and this at least one tricyclic hydrocarbon may include a plurality of simple or branched hydrocarbons substituted at the tricyclic structure).

4. The method of manufacturing a porous insulating film as set forth in claim 1 ,

wherein the number of carbon atoms of said volatile hydrocarbon group is equal to or greater than 2 and equal to or less than 10.

5. The method of manufacturing a porous insulating film as set forth in claim 1 ,

wherein said cyclic siloxane compound is a trivinylcyclotrisiloxane monomer represented by the following formula (1):

wherein at least one of R1, R2 and R3 is said volatile hydrocarbon group.

6. The method of manufacturing a porous insulating film as set forth in claim 1 ,

wherein said cyclic siloxane compound is a tetravinylcyclotetrasiloxane monomer represented by the following formula (2):

wherein at least one of R1, R2, R3 and R4 is said volatile hydrocarbon group.

7. The method of manufacturing a porous insulating film as set forth in claim 1 ,

wherein the skeleton of said silicon-containing compound is composed of silicon (Si) and oxygen (O) in a straight chain form.

8. The method of manufacturing a porous insulating film as set forth in claim 7 ,

wherein said silicon-containing compound includes a structure represented by the following formula (3):

wherein R1 to R6 may be identical or different, and each represent any one selected from the group consisting of hydrogen, a hydrocarbon group, and an oxidized hydrocarbon group;

wherein R1 to R4 may be identical or different, and each represent any one selected from the group consisting of hydrogen, a hydrocarbon group, and an oxidized hydrocarbon group;

wherein R1 to R4 may be identical or different, and each represent any one selected from the group consisting of hydrogen, a hydrocarbon group, and an oxidized hydrocarbon group; or

wherein R1 to R4 may be identical or different, and each represent any one selected from the group consisting of hydrogen, a hydrocarbon group, and an oxidized hydrocarbon group.

9. The method of manufacturing a porous insulating film as set forth in claim 1 ,

wherein an oxidizing agent gas is introduced into said plasma.

10. The method of manufacturing a porous insulating film as set forth in claim 1 ,

wherein the average value of the pore size in said porous insulating film is equal to or less than 1 nm in diameter.

11. The method of manufacturing a porous insulating film as set forth in claim 1 ,

wherein the C/Si ratio in said porous insulating film is equal to or more than 1 and equal to or less than 3 as a ratio of the number of atoms.

12. A method of manufacturing a semiconductor device comprising:

forming a porous insulating film by the method of manufacturing a porous insulating film as set forth in claim 1 .

13. The method of manufacturing a porous insulating film as set forth in claim 1 ,

wherein when using heat, a temperature of the substrate is set to 150° C. to 400° C.

14. The method of manufacturing a porous insulating film as set forth in claim 1 ,

wherein when using light, a wavelength of the light is set to 150 to 350 nm.

15. The method of manufacturing a porous insulating film as set forth in claim 1 ,

wherein when using charged particles, the charged particles are electrons with an energy of 0.25 KeV to 20 KeV.