Lead frame and semiconductor package including the same
A lead frame and a semiconductor package including the lead frame are provided. The lead frame includes: a base material; a first metal layer which is formed on at least one side of the base material, of which a surface is roughly formed, and which includes copper or nickel; a second metal layer which is formed on a surface of the first metal layer, of which a surface is roughly formed, and which includes palladium or a palladium alloy; a third metal layer which is formed on a surface of the second metal layer, of which a surface is roughly formed, and which includes gold or a gold alloy; and a fourth metal layer which is formed on a surface of the third metal layer, of which a surface is roughly formed, and which includes metal that includes silver.
1. A semiconductor package comprising:
a lead frame comprising:
a base material;
a first metal layer which is formed on at least one side of the base material, of which a surface is roughly formed, and which comprises nickel;
a second metal layer which is formed on a surface of the first metal layer, of which a surface is roughly formed, and which comprises palladium or a palladium alloy;
a third metal layer which is formed on a surface of the second metal layer, of which a surface is roughly formed, and which comprises gold or a gold alloy; and
a fourth metal layer which is formed on a surface of the third metal layer, of which a surface is roughly formed, and which comprises metal comprising a gold-silver alloy
a semiconductor die attached to the lead frame;
epoxy attaching the semiconductor die to the lead frame; and
an organic layer disposed between the epoxy and the fourth metal layer,
wherein the first metal layer comprises:
a seed layer of which a surface is roughly formed; and
a protection layer which is formed on the surface of the seed layer and comprises nickel which is the same material as a material for forming the seed layer.