Methods for fabricating integrated circuits including semiconductive resistor structures in a FinFET architecture
A method for fabricating a FinFET integrated circuit includes depositing a first polysilicon layer at a first end of a diffusion region and a second polysilicon layer at a second end of the diffusion region; diffusing an n-type material into the diffusion region to form a diffused resistor; and epitaxially growing a silicon material between the first and second polysilicon layers to form fins structures over the diffused resistor and spanning between the first and second polysilicon layers.
1. A method for fabricating a FinFET integrated circuit, comprising:
depositing a first polysilicon layer at a first end of a diffusion region and a second polysilicon layer at a second end of the diffusion region;
diffusing dopant material into the diffusion region to form a diffused resistor; and
epitaxially growing a silicon material between the first and second polysilicon layers to form fins structures over the diffused resistor and spanning between the first and second polysilicon layers.
2. The method of claim 1 , wherein diffusing the dopant material into the semiconductor substrate comprises diffusing an n-type material into a p-type well formed in the semiconductor substrate.
3. The method of claim 1 , wherein diffusing the dopant material into the semiconductor substrate comprises diffusing an n-type material into an n-type well formed in the semiconductor substrate.
4. The method of claim 3 , further comprising forming a shallow trench isolation feature in the diffusion region.
5. The method of claim 3 , wherein forming the diffusion region comprises forming a first and second diffusion sub-region, the first and second diffusion sub-regions being separated by a region wherein no n-type material is diffused.
6. The method of claim 1 , wherein depositing the first and second polysilicon layers comprises depositing the first and second polysilicon layers adjacent to the first and second ends of the diffusion region.
7. The method of claim 1 , wherein depositing the first and second polysilicon layers comprises depositing the first and second polysilicon layers overlapping the first and second ends of the diffusion region.
8. The method of claim 1 , wherein epitaxially growing the silicon material comprises expitaxially growing a silicon material with an atomic percentage of Ge or C.
9. The method of claim 1 , wherein epitaxially growing the silicon material comprises expitaxially growing a silicon material with a sub-atomic percentage of B or P.
10. The method of claim 1 , further comprising forming a dummy polysilicon layer over the diffusion region and between the first and second polysilicon layers.
11. The method of claim 1 , further comprising forming a contact to the diffusion region.
12. A method for fabricating a FinFET integrated circuit, comprising:
forming a well structure within a semiconductor substrate;
defining a diffusion region on the semiconductor substrate and over the well region, the defined diffusion region indicating an area wherein a diffused resistor is to be formed;
depositing a first polysilicon layer at a first end of a diffusion region and a second polysilicon layer at a second end of the diffusion region, wherein the first polysilicon region is deposited substantially parallel to and opposite of the second polysilicon region;
diffusing an n-type dopant material into the diffusion region to form a diffused resistor; and
epitaxially growing a silicon material between the first and second polysilicon layers to form a plurality of fins structures over the diffused resistor and spanning between the first and second polysilicon layers.
13. The method of claim 12 , wherein forming the well structure comprises forming a p-type well structure.
14. The method of claim 12 , wherein forming the well structure comprises forming an n-type well structure.
15. The method of claim 14 , further comprising forming a shallow trench isolation feature in the diffusion region.
16. The method of claim 12 , wherein epitaxially growing the silicon material comprises expitaxially growing a silicon material with an atomic percentage of Ge or C.
17. The method of claim 12 , wherein epitaxially growing the silicon material comprises expitaxially growing a silicon material with a sub-atomic percentage of B or P.
18. The method of claim 1 , further comprising forming a contact to the diffusion region.
19. A method for fabricating a FinFET integrated circuit, comprising:
forming a well structure within a semiconductor substrate;
defining a diffusion region on the semiconductor substrate and over the well region, the defined diffusion region indicating an area wherein a diffused resistor is to be formed;
depositing a first polysilicon layer at a first end of a diffusion region and a second polysilicon layer at a second end of the diffusion region, wherein the first polysilicon region is deposited substantially parallel to and opposite of the second polysilicon region;
diffusing an n-type dopant material into the diffusion region to form a diffused resistor;
depositing a third polysilicon layer parallel to and between the first and second polysilicon layers, and over the diffusion region; and
epitaxially growing a silicon material between the first and third polysilicon layers and between the second and third polysilicon layers to form a plurality of fins structures over the diffused resistor and spanning between the first and second polysilicon layers and between the second and third polysilicon layers.
20. The method of claim 19 , further comprising forming a contact to the diffusion region.