Measuring apparatus, imprint system, measuring method, and device manufacturing method

1. A measuring apparatus for, based on a characteristic of reflected light obtained by irradiating with light a pattern formed on a substrate, obtaining a thickness of a residual layer in a recessed portion of the pattern formed on the substrate, the measuring apparatus comprising:

a storage unit configured to store a relationship, regarding an irradiation condition based on a correlation between a characteristic of each of beams of reflected light from a plurality of patterns different from one another in a thickness of a residual layer in a recessed portion and the thickness of the residual layer of each of the plurality of patterns, between the characteristic of the reflected light from each pattern and the thickness of the residual layer of the pattern; and

a processing unit configured to, based on a characteristic of the reflected light from the pattern formed on the substrate irradiated with light under the irradiation condition and the relationship stored in the storage unit, obtain the thickness of the residual layer in the recessed portion of the pattern formed on the substrate.

2. The measuring apparatus according to claim 1 , wherein the irradiation condition includes a wavelength of the light or an angle of incidence of the light.

3. The measuring apparatus according to claim 1 , wherein the processing unit obtains the thickness of the residual layer using as the characteristic an intensity of the reflected light, an intensity ratio of P-polarized light to S-polarized light, or a phase difference between the P-polarized light and the S-polarized light, the P-polarized light and the S-polarized light being included in the reflected light.

4. The measuring apparatus according to claim 1 , wherein the storage unit stores as the relationship a coefficient of an expression for obtaining the thickness of the residual layer from the characteristic, or information indicating a correspondence relationship between the characteristic and the thickness of the residual layer.

5. The measuring apparatus according to claim 1 , wherein the pattern formed on the substrate is a pattern formed by imprinting.

6. The measuring apparatus according to claim 1 , wherein the irradiation condition includes a wavelength of the light or an angle of incidence of the light,

wherein the characteristic of reflected light from the plurality of patterns is a measured value obtained by measuring at least one of a phase difference and an intensity ratio of the reflected light, and

wherein the storage unit obtains a correlation coefficient between the characteristic of reflected light from the plurality of patterns and the thickness of the residual layer of the pattern under each of the different irradiation conditions, and stores a relationship between the characteristic of the reflected light from the pattern and the thickness of the residual layer of the pattern regarding the irradiation condition under which the correlation coefficient is close to 1.

7. An imprint system comprising:

an imprint apparatus for forming a pattern on a substrate using a mold; and

a measuring apparatus for obtaining a thickness of a residual layer in a recessed portion of the pattern formed by the imprint apparatus,

wherein the measuring apparatus obtains, based on a characteristic of each of beams of reflected light obtained by irradiating with light a pattern formed by the imprint apparatus, a thickness of a residual layer in a recessed portion of the pattern formed by the imprint apparatus, the measuring apparatus comprising:

a storage unit configured to store a relationship, regarding an irradiation condition based on a correlation between a characteristic of reflected light from a plurality of patterns different from one another in a thickness of a residual layer in a recessed portion and the thickness of the residual layer of each of the plurality of patterns, between the characteristic of the reflected light from each pattern and the thickness of the residual layer of the pattern; and

a processing unit configured to, based on a characteristic of the reflected light from the pattern formed by the imprint apparatus on the substrate irradiated with light under the irradiation condition and the relationship stored in the storage unit, obtain the thickness of the residual layer in the recessed portion of the pattern formed by the imprint apparatus.

8. The imprint system according to claim 7 , wherein the imprint system controls the imprint apparatus based on information of the thickness of the residual layer obtained by the measuring apparatus.

9. The imprint system according to claim 7 , further comprising an etching apparatus for removing the residual layer in the recessed portion of the pattern formed by the imprinting apparatus,

wherein, based on information of the thickness of the residual layer obtained by the measuring apparatus, the etching apparatus removes the residual layer in the recessed portion of the pattern formed by the imprint apparatus.

10. A method of, based on a characteristic of reflected light obtained by irradiating with light a pattern formed on a substrate, obtaining a thickness of a residual layer in a recessed portion of the pattern formed on the substrate, the method comprising:

obtaining a relationship, regarding an irradiation condition based on a correlation between a characteristic of each of beams of reflected light from a plurality of patterns different from one another in a thickness of a residual layer in a recessed portion and the thickness of the residual layer of each of the plurality of patterns, between the characteristic of the reflected light from each pattern and the thickness of the residual layer of the pattern; and

obtaining, based on a characteristic of the reflected light from the pattern formed on the substrate irradiated with light under the irradiation condition and the relationship, the thickness of the residual layer in the recessed portion of the pattern formed on the substrate.

11. The method according to claim 10 , wherein the irradiation condition includes a wavelength of the light or an angle of incidence of the light.

12. The method according to claim 10 , wherein the irradiation condition is selected based on the correlation obtained under, among a plurality of irradiation conditions, each of the plurality of irradiation conditions.

13. The method according to claim 10 , wherein an intensity of the reflected light, an intensity ratio of P-polarized light to S-polarized light, or a phase difference between the P-polarized light and the S-polarized light is used as the characteristic, the P-polarized light and the S-polarized light being included in the reflected light.

14. The method according to claim 10 , wherein the thickness of the residual layer in the recessed portion of each of the plurality of patterns different from one another in the thickness of the residual layer in the recessed portion is measured using a cross-sectional SEM.

15. The method according to claim 10 , wherein a coefficient of an expression for obtaining the thickness of the residual layer in the recessed portion from the characteristic, or information indicating a correspondence relationship between the characteristic and the thickness of the residual layer in the recessed portion is obtained as the relationship.

16. A device manufacturing method comprising:

forming a pattern on a substrate using an imprint system; and

processing the substrate on which the pattern has been formed,

wherein the imprint system comprising:

an imprint apparatus for forming a pattern on a substrate using a mold; and

a measuring apparatus for obtaining a thickness of a residual layer in a recessed portion of the pattern formed by the imprint apparatus,

wherein the measuring apparatus obtains, based on a characteristic of each of beams of reflected light obtained by irradiating with light a pattern formed by the imprint apparatus, a thickness of a residual layer in a recessed portion of the pattern formed by the imprint apparatus, the measuring apparatus comprising:

a storage unit configured to store a relationship, regarding an irradiation condition based on a correlation between a characteristic of reflected light from a plurality of patterns different from one another in a thickness of a residual layer in a recessed portion and the thickness of the residual layer of each of the plurality of patterns, between the characteristic of the reflected light from each pattern and the thickness of the residual layer of the pattern; and

a processing unit configured to, based on a characteristic of the reflected light from the pattern formed by the imprint apparatus on the substrate irradiated with light under the irradiation condition and the relationship stored in the storage unit, obtain the thickness of the residual layer in the recessed portion of the pattern formed by the imprint apparatus.