Cross-coupling based design using diffusion contact structures

1. A method comprising:

providing first and second gate structures over a substrate;

providing a first gate cut region across the first gate structure, and a second gate cut region across the second gate structure;

providing a first gate contact over the first gate structure, and a second gate contact over the second gate structure; and

providing a diffusion contact structure between the first and second gate cut regions to couple the first gate contact to the second gate contact.

2. The method according to claim 1 , further comprising:

providing the diffusion contact structure, the first gate cut region, and the second gate cut region within a two-gate pitch region.

3. The method according to claim 2 , wherein the two-gate pitch region includes first, second, third, and fourth transistors.

4. The method according to claim 3 , further comprising:

providing a first transistor gate structure of the first transistor and a second transistor gate structure of the second transistor on opposite sides of the first gate cut region; and

providing a third transistor gate structure of the third transistor and a fourth transistor gate structure of the fourth transistor on opposite sides of the second gate cut region.

5. The method according to claim 1 , wherein the diffusion contact structure overlaps the first gate structure, the second gate structure, or a combination thereof.

6. The method according to claim 1 , further comprising:

providing a multiplexer circuit having the first and second gate structures, the first and second gate cut regions, the first and second gate contacts, and the diffusion contact structure.

7. The method according to claim 1 , further comprising:

providing a flip-flop circuit having the first and second gate structures, the first and second gate cut regions, the first and second gate contacts, and the diffusion contact structure.

8. The method according to claim 7 , further comprising:

providing third, fourth, fifth, and sixth gate structures over the substrate;

providing a third gate cut region across the third gate structure, a fourth gate cut region across the fourth gate structure, a fifth gate cut region across the fifth gate structure, and a sixth gate cut region across the sixth gate structure;

providing a third gate contact over the third gate structure, a fourth gate contact over the fourth gate structure, a fifth gate contact over the fifth gate structure, and a sixth gate contact over the sixth gate structure; and

providing a second diffusion contact structure between the third and fourth gate cut regions to couple the third gate contact to the fourth gate contact, and a third diffusion contact structure between the fifth and sixth gate cut regions to couple the fifth gate contact to the sixth gate contact,

wherein the flip-flop circuit further includes the third, fourth, fifth, and sixth gate structures, the third, fourth, fifth, and sixth gate cut regions, the third, fourth, fifth, and sixth gate contacts, and the second and third diffusion contact structures.

9. A device comprising:

first and second gate structures over a substrate;

a first gate cut region across the first gate structure, and a second gate cut region across the second gate structure;

a first gate contact over the first gate structure, and a second gate contact over the second gate structure; and

a diffusion contact structure between the first and second gate cut regions that couples the first gate contact to the second gate contact.

10. The device according to claim 9 , wherein the diffusion contact structure, the first gate cut region, and the second gate cut region are within a two-gate pitch region.

11. The device according to claim 10 , wherein the two-gate pitch region includes first, second, third, and fourth transistors.

12. The device according to claim 11 , further comprising:

a first transistor gate structure of the first transistor and a second transistor gate structure of the second transistor on opposite sides of the first gate cut region; and

a third transistor gate structure of the third transistor and a fourth transistor gate structure of the fourth transistor on opposite sides of the second gate cut region.

13. The device according to claim 9 , wherein the diffusion contact structure overlaps the first gate structure, the second gate structure, or a combination thereof.

14. The device according to claim 9 , further comprising:

a multiplexer circuit having the first and second gate structures, the first and second gate cut regions, the first and second gate contacts, and the diffusion contact structure.

15. The device according to claim 9 , further comprising:

a flip-flop circuit having the first and second gate structures, the first and second gate cut regions, the first and second gate contacts, and the diffusion contact structure.

16. The device according to claim 15 , wherein the flip-flop circuit further includes:

third, fourth, fifth, and sixth gate structures over the substrate;

a third gate cut region across the third gate structure, a fourth gate cut region across the fourth gate structure, a fifth gate cut region across the fifth gate structure, and a sixth gate cut region across the sixth gate structure;

a third gate contact over the third gate structure, a fourth gate contact over the fourth gate structure, a fifth gate contact over the fifth gate structure, and a sixth gate contact over the sixth gate structure; and

a second diffusion contact structure between the third and fourth gate cut regions to couple the third gate contact to the fourth gate contact, and a third diffusion contact structure between the fifth and sixth gate cut regions to couple the fifth gate contact to the sixth gate contact.

17. A method comprising:

providing first and second gate structures over a substrate;

providing a first gate cut region across the first gate structure, and a second gate cut region across the second gate structure;

providing a first gate contact over the first gate structure, and a second gate contact over the second gate structure;

providing a diffusion contact structure outside the first gate cut region, the second gate cut region, or a combination thereof; and

coupling the first gate contact to the second gate contact with the diffusion contact structure.

18. The method according to claim 17 , further comprising:

providing the diffusion contact structure, the first gate cut region, and the second gate cut region within a two-gate pitch region, wherein the two-gate pitch region includes first, second, third, and fourth transistors.

19. The method according to claim 18 , further comprising:

providing a first transistor gate structure of the first transistor and a second transistor gate structure of the second transistor on opposite sides of the first gate cut region; and

providing a third transistor gate structure of the third transistor and a fourth transistor gate structure of the fourth transistor on opposite sides of the second gate cut region.

20. The method according to claim 17 , wherein the diffusion contact structure overlaps the first gate structure, the second gate structure, or a combination thereof.