Bridge rectifier and method for same
A bridge rectifier including a common P-type diode, a common N-type diode, two first metal layers, two pairs of second metal layers, two AC inputs and two DC outputs. The P-type diode includes a common P-type doping region, a pair of first N-type substrate regions and a pair of P-type doping regions. The N-type diode includes a common N-type doping region, a pair of second N-type substrate regions and a pair of N-type doping regions. The first metal layers connect to the common N-type doping region and the common P-type doping region. The second metal layers connect to the P-type doping region and the N-type doping region. Two AC inputs connect to one of the second metal layers of the P-type diode and one of the second metal layers of the N-type diode respectively. Two DC inputs connect to the first metal layers respectively.
1. A bridge rectifier comprising:
a common P-type diode comprising a common P-type doping region, a pair of first N-type substrate regions and a pair of N-type doping regions, the first N-type substrate regions positioned between the common P-type doping region and the N-type doping regions;
a common N-type diode comprising a common N-type doping region, a pair of second N-type substrate regions and a pair of P-type doping regions, the second N-type substrate regions positioned between the common N-type doping region and the P-type doping regions;
two first metal layers connected to the common N-type doping region and the common P-type doping region respectively;
two pairs of second metal layers connected to the pair of N-type doping regions and the pair of P-type doping regions respectively;
two AC inputs connecting to one of the second metal layers of the common N-type diode and one of the second metal layers of the common P-type diode; and
two DC outputs connecting to two first metal layers respectively.
2. The bridge rectifier of claim 1 , wherein the common P-type diode and the common N-type diode each has a trench, wherein the trench of the common P-type diode exists between two of the N-type doping regions and between two of the first N-type substrate regions, and the trench of the common N-type diode exists between two of the P-type doping regions and two of the second N-type substrate regions.
3. The bridge rectifier of claim 2 , wherein the bridge rectifier further comprises two insulating layers; the insulating layers covering the common P-type diode and the common N-type diode; wherein the insulating layer covering the common P-type diode covers the trench of the common P-type diode and exposes the N-type doping regions, and the insulating layer covering the common N-type diode covers the trench of the common N-type diode and exposes the P-type doping regions.
4. The bridge rectifier of claim 1 , wherein the common P-type diode further comprises a P-type extending portion, and the common N-type diode further comprises a N-type extending portion;
wherein the P-type extending portion is positioned between two of the N-type doping regions and two of the first N-type substrate regions of the common P-type diode;
wherein the N-type extending portion is positioned between two of the P-type doping regions and two of the second N-type substrate regions.
5. The bridge rectifier of claim 4 , wherein the bridge rectifier further comprises two insulating layers, the insulating layers covering the common P-type diode and the common N-type diode respectively,
wherein the insulating layer covers the common P-type diode exposes the N-type doping regions;
wherein the insulating layer covers the common N-type diode exposes the P-type doping regions.