Semiconductor device and driving method thereof
A voltage equal to the threshold value of a TFT ( 106 ) is held in capacitor unit ( 109 ). When a video signal is inputted from a source signal line, the voltage held in the capacitor unit is added thereto and a resultant signal is applied to a gate electrode of the TFT ( 106 ). Even when a threshold value is varied for each pixel, each threshold value is held in the capacitor unit ( 109 ) for each pixel. Thus, the influence of a variation in threshold value can be eliminated. Further, holding of the threshold value is conducted by only the capacitor unit ( 109 ) and a charge does not move at writing of a video signal so that a voltage between both electrodes is not changed. Thus, it is not influenced by a variation in capacitance value.
1. A semiconductor device comprising:
a pixel comprising:
a first transistor;
a second transistor;
a third transistor;
a fourth transistor;
a fifth transistor; and
a first capacitor,
wherein a gate of the first transistor is directly connected to a first electrode of the first capacitor,
wherein one of a source and a drain of the second transistor is directly connected to the gate of the first transistor,
wherein the other of the source and the drain of the second transistor is electrically connected to one of a source and a drain of the first transistor,
wherein one of a source and a drain of the third transistor is directly connected to a second electrode of the first capacitor,
wherein one of a source and a drain of the fourth transistor is directly connected to a pixel electrode of a light-emitting element,
wherein the other of the source and the drain of the fourth transistor is directly connected to the one of the source and the drain of the first transistor, and
wherein one of a source and a drain of the fifth transistor is directly connected to the second electrode of the first capacitor.
2. The semiconductor device according to claim 1 , wherein the other of the source and the drain of the fifth transistor is electrically connected to the gate of the first transistor.
3. The semiconductor device according to claim 1 ,
wherein a gate of the third transistor is directly connected to a first gate signal line, and
wherein a gate of the second transistor is directly connected to a second gate signal line.
4. The semiconductor device according to claim 3 ,
wherein a gate of the fourth transistor is directly connected to a third gate signal line, and
wherein a gate of the fifth transistor is directly connected to a fourth gate signal line.
5. The semiconductor device according to claim 1 , further comprising a second capacitor directly connected to the second electrode of the first capacitor.
6. The semiconductor device according to claim 1 , further comprising:
a flexible print circuit; and
a driver circuit,
wherein the driver circuit is configured to select a gate signal line directly connected to a gate of the third transistor, and
wherein the flexible print circuit is operatively connected to the driver circuit.
7. A semiconductor device comprising:
a pixel comprising:
a first transistor;
a second transistor;
a third transistor;
a fourth transistor;
a fifth transistor;
a sixth transistor; and
a first capacitor,
wherein a gate of the first transistor is directly connected to a first electrode of the first capacitor,
wherein one of a source and a drain of the second transistor is directly connected to the gate of the first transistor,
wherein the other of the source and the drain of the second transistor is electrically connected to one of a source and a drain of the first transistor,
wherein one of a source and a drain of the third transistor is directly connected to a second electrode of the first capacitor,
wherein one of a source and a drain of the fourth transistor is directly connected to a pixel electrode of a light-emitting element,
wherein the other of the source and the drain of the fourth transistor is directly connected to the one of the source and the drain of the first transistor,
wherein one of a source and a drain of the fifth transistor is directly connected to the second electrode of the first capacitor, and
wherein one of a source and a drain of the sixth transistor is directly connected to the other of the source and the drain of the fifth transistor.
8. The semiconductor device according to claim 7 , wherein the other of the source and the drain of the sixth transistor is directly connected to the gate of the first transistor.
9. The semiconductor device according to claim 7 ,
wherein a gate of the third transistor is directly connected to a first gate signal line, and
wherein a gate of the second transistor is directly connected to a second gate signal line.
10. The semiconductor device according to claim 9 ,
wherein a gate of the fourth transistor is directly connected to a third gate signal line, and
wherein a gate of the fifth transistor is directly connected to a fourth gate signal line.
11. The semiconductor device according to claim 7 , wherein a gate of the sixth transistor is directly connected to the gate of the first transistor.
12. The semiconductor device according to claim 7 , further comprising a second capacitor directly connected to the second electrode of the first capacitor.
13. The semiconductor device according to claim 7 , further comprising:
a flexible print circuit; and
a driver circuit,
wherein the driver circuit is configured to select a gate signal line directly connected to a gate of the third transistor, and
wherein the flexible print circuit is operatively connected to the driver circuit.
14. A mobile telephone comprising:
an antenna; and
a display portion comprising a pixel, the pixel comprising:
a first transistor;
a second transistor;
a third transistor;
a fourth transistor;
a fifth transistor; and
a first capacitor,
wherein a gate of the first transistor is directly connected to a first electrode of the first capacitor,
wherein one of a source and a drain of the second transistor is directly connected to the gate of the first transistor,
wherein the other of the source and the drain of the second transistor is electrically connected to one of a source and a drain of the first transistor,
wherein one of a source and a drain of the third transistor is directly connected to a second electrode of the first capacitor,
wherein one of a source and a drain of the fourth transistor is directly connected to a pixel electrode of a light-emitting element,
wherein the other of the source and the drain of the fourth transistor is directly connected to the one of the source and the drain of the first transistor, and
wherein one of a source and a drain of the fifth transistor is directly connected to the second electrode of the first capacitor.
15. The mobile telephone according to claim 14 , wherein the other of the source and the drain of the fifth transistor is electrically connected to the gate of the first transistor.
16. The mobile telephone according to claim 14 ,
wherein a gate of the third transistor is directly connected to a first gate signal line, and
wherein a gate of the second transistor is directly connected to a second gate signal line.
17. The mobile telephone according to claim 16 ,
wherein a gate of the fourth transistor is directly connected to a third gate signal line, and
wherein a gate of the fifth transistor is directly connected to a fourth gate signal line.
18. The mobile telephone according to claim 14 , further comprising a second capacitor directly connected to the second electrode of the first capacitor.
19. The mobile telephone according to claim 14 , further comprising:
a flexible print circuit; and
a driver circuit,
wherein the driver circuit is configured to select a gate signal line directly connected to a gate of the third transistor, and
wherein the flexible print circuit is operatively connected to the driver circuit.
20. The semiconductor device according to claim 1 , wherein the other of the source and the drain of the second transistor is directly connected to the one of a source and a drain of the first transistor.
21. The semiconductor device according to claim 7 , wherein the other of the source and the drain of the second transistor is directly connected to the one of a source and a drain of the first transistor.
22. The mobile telephone according to claim 14 , wherein the other of the source and the drain of the second transistor is directly connected to the one of a source and a drain of the first transistor.