IP Library Granted Patent US 9,076,701
Granted Patent B2
US 9,076,701 · App. 14/147,051 · Granted Jul 7, 2015

Wafer supporting structure, intermediate structure of a semiconductor package including the wafer supporting structure

Inventors: Jun-Won Han (Seoul, KR); Jae-Hyun Kim (Yongin-si, KR); Tae-Hoon Kim (Anyang-si, KR); Ho-Geun Lee (Namyangju-si, KR); You-Jeong Jeong (Seoul, KR); Jung-Sik Choi (Seongnam-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H01L24/14B32B7/06Y10T428/1476Y10T428/2839H01L21/6835
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Quick Facts
Patent No.
US 9,076,701
App. No.
14/147,051
Granted
Jul 7, 2015
Kind
B2
Abstract

A wafer supporting structure includes a supporting substrate for supporting a wafer, a release layer for detaching the wafer from the supporting substrate, and an adhesive layer for attaching the wafer to the supporting substrate.

Claims (13)

1. An intermediate structure of a semiconductor package, the intermediate structure comprising:

a wafer including conductive bumps on one surface thereof;

a first adhesive layer directly on the wafer and conformally covering the conductive bumps;

a release layer, the release layer having a property of cracking when a physical force is applied to the release layer;

a second adhesive layer; and

a supporting substrate,

wherein one of the second adhesive layer and the release layer directly contacts the first adhesive layer and fills a space between the conductive bumps to provide a covering structure, and the other of the second adhesive layer and the release layer directly contacts the covering structure and directly contacts the supporting substrate.

2. The intermediate structure as claimed in claim 1 , wherein:

the second adhesive layer directly contacts the first adhesive layer and fills a space between the conductive bumps to provide the covering structure, and the release layer directly contacts the second adhesive layer and the supporting substrate, and

a sum of thicknesses of the first adhesive layer and the second adhesive layer is greater than a thickness in a height direction of the conductive bumps.

3. The intermediate structure as claimed in claim 1 , wherein:

the release layer directly contacts the first adhesive layer and fills a space between the conductive bumps to provide the covering structure, and the release layer directly contacts the second adhesive layer and the supporting substrate, and

a sum of thicknesses of the first adhesive layer and the release layer is greater than a thickness in a height direction of the conductive bumps.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 11, 2014
From: HAN, JUN-WON; KIM, JAE-HYUN; KIM, TAE-HOON; LEE, HO-GEUN; JEONG, YOU-JEONG; CHOI, JUNG-SIK
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 032192/0904 →
Priority Claims (1)
KR 10-2013-0000484 · Jan 3, 2013 · national
Continuity (1)
Related Publication 20140183728A1 · Jul 3, 2014