Methods of forming resistive memory elements
A method of forming a resistive memory element comprises forming an oxide material over a first electrode. The oxide material is exposed to a plasma process to form a treated oxide material. A second electrode is formed on the treated oxide material. Additional methods of forming a resistive memory element, as well as related resistive memory elements, resistive memory cells, and resistive memory devices are also described.
1. A method of forming a resistive memory element, comprising:
forming an oxide material extending continuously over a first electrode;
exposing the oxide material to a decoupled plasma nitridation process to form a treated oxide material extending continuously over the first electrode, the treated oxide material comprising at least one of a hafnium oxy-nitride, a hafnium silicon oxy-nitride, a zirconium oxy-nitride, a zirconium silicon oxy-nitride, a titanium oxy-nitride, a titanium silicon oxy-nitride, a tantalum oxy-nitride, a tantalum silicon oxy-nitride, a niobium oxy-nitride, a niobium silicon oxy-nitride, a vanadium oxy-nitride, a vanadium silicon oxy-nitride, a tungsten oxy-nitride, a tungsten silicon oxy-nitride, a molybdenum oxy-nitride, a molybdenum silicon oxy-nitride, a chromium oxy-nitride, and a chromium silicon oxy-nitride; and
forming a second electrode on the treated oxide material.
2. The method of claim 1 , wherein a power applied during the decoupled plasma nitridation process is within a range of from about 200 watts to about 2500 watts.
3. The method of claim 1 , wherein a duration of the decoupled plasma nitridation process is within a range of from about 10 seconds to about 300 seconds.
4. The method of claim 1 , wherein exposing the oxide material to a decoupled plasma nitridation process comprises nitriding the oxide material to a depth within a range of from about 1 Angstrom to about 50 Angstroms from an exposed surface of the oxide material.
5. The method of claim 4 , wherein nitriding the oxide material to a depth within a range of from about 1 Angstrom to about 50 Angstroms from an exposed surface of the oxide material comprises varying a concentration of nitrogen throughout the depth.
6. The method of claim 1 , wherein exposing the oxide material to a decoupled plasma nitridation process comprises exposing the oxide material to a plasma comprising nitrogen and at least one other element.
7. The method of claim 6 , wherein the at least one other element comprises at least one dopant component.
8. The method of claim 1 , wherein forming an oxide material extending continuously over a first electrode comprises forming at least one of silicon dioxide, a hafnium oxide, a hafnium silicon oxide, a zirconium oxide, a zirconium silicon oxide, a titanium oxide, a titanium silicon oxide, a tantalum oxide, a tantalum silicon oxide, a niobium oxide, a niobium silicon oxide, a vanadium oxide, a vanadium silicon oxide, a tungsten oxide, a tungsten silicon oxide, a molybdenum oxide, a molybdenum silicon oxide, a chromium oxide, and a chromium silicon oxide extending continuously on the first electrode.
9. The method of claim 1 , wherein forming a second electrode on the treated oxide material comprises:
forming a reactive material on the treated oxide material; and
forming a capping material on the reactive material.
10. The method of claim 9 , wherein forming a reactive material on the treated oxide material comprises forming titanium on the treated oxide material.
11. The method of claim 1 , wherein forming an oxide material extending continuously over a first electrode comprises forming at least one of silicon dioxide, a hafnium oxide, a zirconium oxide, a titanium oxide, a tantalum oxide, a niobium oxide, a vanadium oxide, a tungsten oxide, a molybdenum oxide, and a chromium oxide to extend continuously over the first electrode.
12. The method of claim 1 , wherein forming an oxide material extending continuously over a first electrode comprises forming at least one of a hafnium silicon oxide, a zirconium silicon oxide, a titanium silicon oxide, a tantalum silicon oxide, a niobium silicon oxide, a vanadium silicon oxide, a tungsten silicon oxide, a molybdenum silicon oxide, and a chromium silicon oxide to extend continuously over the first electrode.
13. A method of forming a resistive memory element, comprising:
forming a metal oxide material on a first electrode;
exposing the metal oxide material to a decoupled plasma nitridation process to break chemical bonds between oxygen atoms and metal atoms of the metal oxide material and form a metal oxy-nitride material; and
forming a reactive material on the metal oxy-nitride material to remove unbonded oxygen atoms from the metal oxy-nitride material and form an insulative oxygen-deficient region and an conductive oxygen-deficient region in the reactive material.
14. A method of forming a resistive memory element, comprising:
forming a metal oxide material over a first electrode, the metal oxide material comprising an oxide of at least one of chromium, cobalt, hafnium, molybdenum, tantalum, zirconium, lanthanum, manganese, calcium, praseodymium, europium, silicon, germanium, and aluminum;
exposing the metal oxide material to a decoupled plasma nitridation process to simultaneously damage and passivate the metal oxide material and form a treated metal oxide material; and
forming a second electrode over the treated metal oxide material without previously repairing at least some of the damage resulting from exposing the metal oxide material to the plasma nitridation process.
15. A method of forming a resistive memory element, comprising:
forming a hafnium silicon oxide material on a titanium nitride material;
exposing the hafnium silicon oxide material to a decoupled plasma nitridation process to form a hafnium silicon oxy-nitride material over the titanium nitride material;
forming a titanium material on the hafnium silicon oxy-nitride material without previously annealing the hafnium silicon oxy-nitride material; and
forming a tungsten nitride material on the titanium material.
16. The method of claim 15 , wherein forming a hafnium silicon oxide material on a titanium nitride material comprises forming the hafnium silicon oxide material to comprise a ratio of hafnium atoms to silicon atoms in at least a portion of the hafnium silicon oxide material is within a range of from about 3:1 to about 8:1.
17. The method of claim 15 , wherein exposing the hafnium silicon oxide material to a decoupled plasma nitridation process comprises applying a power during the decoupled plasma nitridation plasma process within a range of from about 800 watts to about 2000 watts.