Semiconductor structure and fabrication method thereof
A semiconductor structure includes a gate structure disposed on a substrate and having an outer spacer, a recess disposed in the substrate and adjacent to the gate structure, a doped epitaxial material filling up the recess, a cap layer including an undoped epitaxial material and disposed on the doped epitaxial material, a lightly doped drain disposed below the cap layer and sandwiched between the doped epitaxial material and the cap layer, and a silicide disposed on the cap layer and covering the doped epitaxial material to cover the cap layer together with the outer spacer without directly contacting the lightly doped drain.
1. A semiconductor structure, comprising:
a substrate;
a gate structure disposed on said substrate;
at least one recess disposed in said substrate, adjacent to said gate structure;
a doped epitaxial material filling up said at least one recess;
a lightly doped drain region disposed within said doped epitaxial material and at a top of said doped epitaxial material; and
a cap layer comprising an undoped epitaxial material, disposed on said doped epitaxial material and covering said doped epitaxial material, wherein said lightly doped drain region is sandwiched between a bottom of said doped epitaxial material and said cap layer; and
an outer spacer surrounding said gate structure and being on the top of said cap layer.
2. The semiconductor structure of claim 1 , further comprising:
a silicide at least partially covering said cap layer, wherein said cap layer segregates said lightly doped drain region from said silicide so that said silicide does not contact said lightly doped drain region.
3. The semiconductor structure of claim 2 , further comprising:
an interlayer dielectric layer covering said cap layer and said gate structure; and
a contact plug disposed in said interlayer dielectric layer and electrically connected to said cap layer, wherein said silicide disposed on said cap layer and completely covering said cap layer.
4. The semiconductor structure of claim 2 , further comprising:
an interlayer dielectric layer covering said cap layer and said gate structure; and
a contact plug disposed in said interlayer dielectric layer and electrically connected to said cap layer, wherein said silicide disposed on said cap layer so that said contact plug completely covers silicide, and said outer spacer, said interlayer dielectric layer and said silicide together cover said cap layer.
5. The semiconductor structure of claim 1 , further comprising a spacer disposed between said gate structure and said outer spacer, and said cap layer and said spacer together cover said lightly doped drain region.
6. The semiconductor structure of claim 1 , wherein said gate structure further comprises a spacer simultaneously in direct contact with both said cap layer and said lightly doped drain region.
7. The semiconductor structure of claim 1 , wherein said at least one recess further comprises a tip disposed under said gate structure and said lightly doped drain region overlaps said tip.
8. The semiconductor structure of claim 1 , wherein said lightly doped drain region extends to below said gate structure.
9. The semiconductor structure of claim 1 , wherein said gate structure is one of a PMOS gate and an NMOS gate.
10. The semiconductor structure of claim 1 , wherein said doped epitaxial material comprises two different tetravalent elements.
11. The semiconductor structure of claim 1 , wherein said lightly doped drain region completely overlaps said top of said doped epitaxial material and extends to below said gate structure.
12. The semiconductor structure of claim 1 , further comprising a source doping region disposed in said cap layer, wherein said source doping region does not entirely overlap said cap layer.
13. A semiconductor structure, comprising:
a substrate;
a gate structure disposed on said substrate;
at least one recess disposed in said substrate, adjacent to said gate structure;
a doped epitaxial material filling up said at least one recess;
a lightly doped drain region disposed at a top of said doped epitaxial material;
a cap layer comprising an undoped epitaxial material, disposed on said doped epitaxial material and covering said doped epitaxial material;
a silicide at least partially covering said cap layer, wherein said cap layer segregates said lightly doped drain region from said silicide so that said silicide does not contact said lightly doped drain region;
an interlayer dielectric layer covering said cap layer and said gate structure;
a contact plug disposed in said interlayer dielectric layer and electrically connected to said cap layer; and
an outer spacer surrounding said gate structure, wherein said silicide disposed on said cap layer so that said contact plug completely covers silicide, and said outer spacer, said interlayer dielectric layer and said silicide together cover said cap layer.