Method of grinding substrate and method of manufacturing semiconductor light emitting device using the same

1. A method of grinding a substrate, the method comprising:

preparing a substrate including a first main surface having a semiconductor layer thereon and a second main surface opposed to the first main surface;

attaching a support film to the first main surface using a glue;

curing the glue by applying energy thereto;

grinding the second main surface of the substrate so as to reduce a thickness of the substrate; and

removing the support film from the first main surface by applying force to the support film in a non-traverse direction,

wherein longitudinal mode bonding strength between the cured glue and the semiconductor layer is lower than longitudinal mode bonding strength between the support film and the cured glue.

2. The method of claim 1 , wherein the attaching of the support film includes:

applying the glue to the first main surface of the substrate;

disposing the support film on the first main surface to which the glue is applied; and

fixing the support film to the first main surface of the substrate by curing the glue.

3. The method of claim 1 , wherein traverse mode bonding strength between the support film and the semiconductor layer, realized through the cured glue, is about 0.5 Gpa or more.

4. The method of claim 1 , wherein the support film has a thickness of about 200 to 700 μm.

5. The method of claim 1 , wherein the glue is a heat curable glue or an ultraviolet curable glue.

6. The method of claim 1 , wherein the support film includes a base film and a bonding reinforcement layer disposed on a surface of the base film, bonding strength between the bonding reinforcement layer and the cured glue being greater than bonding strength between the base film and the cured glue.

7. The method of claim 6 , wherein the base film includes polycarbonate (PC) or polyethylene terephthalate (PET).

8. The method of claim 6 , wherein the bonding reinforcement layer includes at least one of an acrylic resin and a silicon resin.

9. The method of claim 1 , wherein the removing of the support film from the first main surface includes:

attaching an adhesive tape to the support film; and

separating the support film from the first main surface along with the glue by lifting the adhesive tape in the non-traverse direction.

10. The method of claim 9 , wherein the separating of the support film from the first main surface is performed by lifting the adhesive tape in an almost vertical direction.

11. A method of manufacturing a semiconductor light emitting device, the method comprising:

preparing a wafer including a first main surface on which an epitaxial layer for a semiconductor light emitting device is disposed and a second main surface opposed to the first main surface;

attaching a support film to the first main surface using a glue;

curing the glue by applying energy thereto;

grinding the second main surface of the wafer so as to reduce a thickness of the wafer;

removing the support film from the first main surface by applying force to the support film in a non-traverse direction; and

cutting the wafer into individual light emitting devices.

12. The method of claim 11 , wherein the wafer is a sapphire substrate.

13. The method of claim 11 , further comprising: applying an optical element to the second main surface, between the grinding of the second main surface and the removing of the support film.

14. The method of claim 13 , wherein the optical element includes an optical lens or a fluorescent film.

15. A method of manufacturing light emitting devices, the method comprising:

preparing a wafer comprising a substrate including a first main surface on which a semiconductor layer is disposed and a second main surface opposed to the first main surface;

attaching a support film to the first main surface using a glue;

grinding the second main surface of the wafer so as to reduce a thickness of the wafer;

removing the support film from the first main surface by applying force to the support film in a non-transverse direction; and

cutting the wafer into a plurality of light emitting devices.

16. The method of claim 15 , wherein the semiconductor layer includes an epitaxial layer for semiconductor light emitting devices.

17. The method of claim 15 , wherein traverse mode bonding strength between the support film and the semiconductor layer is about 0.5 Gpa or more.

18. The method of claim 15 , wherein the attaching of the support film comprises curing the glue by applying energy thereto.

19. The method of claim 15 , wherein the removing of the support film from the first main surface comprises:

attaching an adhesive tape to the support film; and

separating the support film from the first main surface along with the glue by lifting the adhesive tape in the non-traverse direction.

20. The method of claim 15 , wherein traverse mode bonding strength between the support film and the semiconductor layer, realized through the cured glue, is about 0.5 Gpa or more.