Bonded body and semiconductor module
Bondability and heat conductivity of a bonded body in which some of metal, ceramic, or semiconductor are bonded to each other are improved. In the bonded body in which a first member and a second member each comprise one of metal, ceramic, or semiconductor are bonded to each other, the second member is bonded to the first member by way of an adhesive member disposed to the surface of the first member, and the adhesive member contains a V 2 O 5 -containing glass and metal particles. In a semiconductor module having a base metal, a ceramic substrate, a metal wiring, and a semiconductor chip, the ceramic substrate is bonded to the base metal by way of a first adhesive member disposed to the surface of the base metal, the metal wiring is bonded to the ceramic substrate by way of a second adhesive member disposed to the surface of the ceramic substrate, the semiconductor chip is bonded to the metal wiring by way of a third adhesive member disposed to the surface of the metal wiring, and the first adhesive member, the second adhesive member, and the third adhesive member each comprise a V 2 O 5 -containing glass and metal particles.
1. A bonded body in which a first member and a second member each comprising one of metal and ceramic are bonded to each other, wherein
the second member is bonded to the first member by way of an adhesive member disposed on the surface of the first member, the adhesive member contains a V 2 O 5 -containing lead-free glass and metal particles, the metal particles comprise account for 30 to 95 vol % of the adhesive member; and
wherein the lead-free glass comprises 10 to 60 mass % of Ag 2 O, 5 to 65 mass % of V 2 O 5 , and 15 to 50 mass % of TeO 2 .
2. The bonded body according to claim 1 ,
wherein the metal particles comprise account for 60 to 95 vol % of the adhesive member.
3. The bonded body according to claim 2 , wherein the metal particles comprise at least Ag.
4. The bonded body according to claim 1 , wherein the lead-free glass is less crystalline than amorphous and the rate of crystallization is 30% or less.
5. The bonded body according to claim 1 , wherein the metal particles comprise at least Ag or an Sn-containing solder.
6. A bonded body in which a first member and a second member each comprising one of metal and ceramic are bonded to each other, wherein
the second member is bonded to the first member by way of an adhesive member disposed on the surface of the first member, the adhesive member contains a V 2 O 5 -containing lead-free glass and metal particles, the metal particles comprise account for 30 to 95 vol % of the adhesive member; and
wherein the lead-free glass comprises 35 to 55 mass % of V 2 O 5 , 15 to 35 mass % of TeO 2 , 4 to 20 mass % of P 2 O 5 , and 5 to 30 mass % of one or more of Fe 2 O 3 , MnO 2 , Sb 2 O 3 , Bi 2 O 3 , K 2 O, and ZnO.
7. A semiconductor module comprising a base metal, a ceramic substrate, a metal wiring, and a semiconductor chip wherein
the ceramic substrate is bonded to the base metal by way of a first adhesive member disposed to the surface of the base metal,
the metal wiring is bonded to the ceramic substrate by way of a second adhesive member disposed to the surface of the ceramic substrate,
the semiconductor chip is bonded to the metal wiring by way of a third adhesive member disposed to the surface of the metal wiring, and
the first adhesive member, the second adhesive member, and the third adhesive member each contain a V 2 O 5 -containing lead-free glass and metal particles,
the metal particles of the first adhesive member or the metal particles of the second adhesive member each comprise account for 30 to 95 vol % of the first adhesive member or the second adhesive member,
the metal particles of the third adhesive member comprise account for 60 to 95 vol % of the third adhesive member.
8. The semiconductor module according to claim 7 , wherein the lead-free glass of the first adhesive member, the lead-free glass of the second adhesive member, or the lead-free glass of the third adhesive member comprises 35 to 55 mass % of V 2 O 5 , 15 to 35 mass % of TeO 2 , 4 to 20 mass % of P 2 O 5 , and 5 to 30 mass % of one or more of Fe 2 O 3 , WO 3 , MoO 3 , MnO 2 , Sb 2 O 3 , Bi 2 O 3 , BaO, K 2 O, and ZnO.
9. The semiconductor module according to claim 7 , wherein the lead-free glass of the first adhesive member, the lead-free glass of the second adhesive member, or the lead-free glass of the third adhesive member comprises 10 to 60 mass % of Ag 2 O, 5 to 65 mass % of V 2 O 5 , and 15 to 50 mass % of TeO 2 .
10. The semiconductor module according to claim 7 , wherein the V 2 O 5 is less crystalline than amorphous phase and the rate of crystallization thereof is 30% or less.
11. The semiconductor module according to claim 7 , wherein the metal particles of the first adhesive member or the metal particles of the second adhesive member comprise at least one of Ag or an Sn-containing solder.
12. The semiconductor module according to claim 7 , wherein the metal particles of the third adhesive member comprise Ag.