Photosensitive material and method of lithography
View Patent ↗Photosensitive materials and method of forming a pattern that include providing a composition of a component of a photosensitive material that is operable to float to a top region of a layer formed from the photosensitive material. In an example, a photosensitive layer includes a first component having a fluorine atom (e.g., alkyl fluoride group). After forming the photosensitive layer, the first component floats to a top surface of the photosensitive layer. Thereafter, the photosensitive layer is patterned.
1. A method, comprising:
providing a photosensitive material that includes a solvent, a photoacid generator, and a quencher having an alkyl fluoride group of C 2 F 5 linked to the quencher;
depositing the photosensitive material onto a semiconductor substrate;
while the photosensitive material is disposed on the semiconductor substrate, floating the quencher having the alkyl functional group of C 2 F 5 from a lower region to an upper region of a layer comprising the photosensitive material, wherein the floating quencher has the formula
wherein R4, R5 and R6 are alkyl fluoride and one of R4, R5, and R6 is the C 2 F 5 component;
thereafter, exposing the layer of photosensitive material to a radiation beam;
wherein the upper region has a lower amount of acid from the photoacid generator than the lower region after the exposing of the layer; and
developing the exposed layer.
2. The method of claim 1 , further comprising: determining a concentration of the quencher such that the developing includes forming substantially vertical sidewalls.
3. The method of claim 1 , wherein the R4 is the C 2 F 5 component.
4. The method of claim 1 , wherein the R5 is the C 2 F 5 component.
5. The method of claim 1 , wherein the R6 is the C 2 F 5 component.
6. A method, comprising:
providing a photosensitive material that includes a solvent, a photoacid generator, and a quencher having an alkyl fluoride group linked to the quencher;
depositing the photosensitive material onto a semiconductor substrate;
while the photosensitive material is disposed on the semiconductor substrate, floating the quencher having the alkyl functional group of C 2 F 5 from a lower region to an upper region of a layer comprising the photosensitive material, wherein the floating quencher has the formula
wherein R 12 has the C 2 F 5 component, thereafter, exposing the layer of photosensitive material to a radiation beam;
wherein the upper region has a lower amount of acid than the lower region after the exposing of the layer; and
developing the exposed layer.
7. The method of claim 6 , further comprising: determining a concentration of the quencher such that the developing includes forming substantially vertical sidewalls.
8. The method of claim 6 , wherein the photosensitive material further includes a solvent.