Grids in backside illumination image sensor chips and methods for forming the same

1. A device comprising:

a semiconductor substrate having a front side and a backside;

a first photo-sensitive device disposed on the front side of the semiconductor substrate;

a first and a second grid line parallel to each other, wherein the first and the second grid lines are on the backside of, and overlying, the semiconductor substrate;

an adhesion layer;

a metal layer over the adhesion layer; and

a high-refractive index layer over the metal layer, wherein the adhesion layer, the metal layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.

2. The device of claim 1 , wherein the first photo-sensitive device is underlying and aligned to a space between the first and the second grid lines, and wherein the adhesion layer, the metal layer, and the high-refractive index layer are free from portions over and aligned to the first photo-sensitive device.

3. The device of claim 1 , wherein the adhesion layer comprises chromium.

4. The device of claim 1 , wherein the metal layer comprises silver.

5. The device of claim 1 , wherein the first and the second grid lines comprise a ceramic.

6. The device of claim 1 , wherein the high-refractive index layer comprises silicon oxide, and has a refractive index greater than 1.5.

7. The device of claim 1 , wherein the high-refractive index layer comprises a high-k dielectric material, and has a refractive index greater than about 2.0.

8. The device of claim 1 further comprising:

a second image sensor disposed on the front side of the semiconductor substrate; and

an optical shielding layer over and aligned to the second image sensor, wherein the optical shielding layer is formed of a same material as, and is at substantially a same level as, the first and the second grid lines, and wherein the adhesion layer, the metal layer, and the high-refractive index layer extend on a top surface of the optical shielding layer.

9. A device comprising:

a semiconductor substrate having a front side and a backside;

a plurality of grid lines on the backside of the semiconductor substrate and forming a plurality of grids;

a plurality of photo-sensitive devices underlying and aligned to grid openings between the plurality of grid lines, wherein the plurality of photo-sensitive devices is at the front side of the semiconductor substrate, and is configured to receive light from the backside of the semiconductor substrate and convert the light to an electrical signal;

a chromium layer comprising top surface portions on top surfaces of the plurality of grid lines, and sidewall portions on sidewalls of the plurality of grid lines;

a silver layer comprising top surface portions and sidewall portions on the top surface portions and the sidewall portions, respectively, of the chromium layer; and

a high-refractive index layer comprising top surface portions and sidewall portions on the top surface portions and the sidewall portions, respectively, of the silver layer.

10. The device of claim 9 , wherein the chromium layer, the silver layer, and the high-refractive index layer are substantially conformal layers.

11. The device of claim 9 , wherein the chromium layer, the silver layer, and the high-refractive index layer do not comprise portions aligned to the plurality of photo-sensitive devices.

12. The device of claim 9 , wherein the plurality of grid lines is metal lines.

13. The device of claim 9 , wherein the plurality of grid lines is ceramic lines.

14. The device of claim 9 further comprising:

an image sensor disposed on the front side of the semiconductor substrate; and

an optical shielding layer over and aligned to the image sensor, wherein the optical shielding layer is formed of a same material as, and is at substantially a same level as, the plurality of grid lines, and wherein the chromium layer, the silver layer, and the high-refractive index layer extend on a top surface and sidewalls of the optical shielding layer.

15. A device comprising:

a semiconductor substrate;

a photo-sensitive device on a first side of the semiconductor substrate;

a first grid line and a second grid line parallel to each other;

a third grid line and a fourth grid line parallel to each other and perpendicular to the first grid line and the second grid line, wherein a space defined by the first grid line, the second grid line, the third grid line, and the fourth grid line is aligned with the photo-sensitive device, and the first grid line, the second grid line, the third grid line, and the fourth grid line are on a second side of the semiconductor substrate opposite to the first side;

an adhesion layer extending on a top surface and sidewalls of each of the first grid line, the second grid line, the third grid line, and the fourth grid line;

a metal layer over the adhesion layer, wherein the metal layer comprises a top portion over a top surface portion of the adhesion layer, and sidewall portions on sidewalls of the adhesion layer;

a high-refractive index layer over the metal layer; and

an oxide layer filling a space between the first grid line and the second line, wherein the space is further between the third grid line and the fourth grid line.

16. The device of claim 15 , wherein the adhesion layer is a substantially conformal layer.

17. The device of claim 15 , wherein the oxide layer comprises a portion level with the adhesion layer.

18. The device of claim 15 , wherein the high-refractive index layer comprises silicon oxide, and has a refractive index greater than about 1.5.

19. The device of claim 15 , wherein the high-refractive index layer comprises a high-k dielectric material, and has a refractive index greater than about 2.0.

20. The device of claim 15 , wherein the adhesion layer comprises chromium, and the metal layer comprises silver.