Wafer dicing from wafer backside and front side
Approaches for backside laser scribe plus front side laser scribe and plasma etch dicing of a wafer or substrate are described. For example, a method of dicing a semiconductor wafer having a plurality of integrated circuits on a front side thereof and metallization on a backside thereof involves patterning the metallization on the backside with a first laser scribing process to provide a first plurality of laser scribe lines on the backside. The method also involves forming a mask on the front side. The method also involves patterning, from the front side, the mask with a second laser scribing process to provide a patterned mask with a second plurality of scribe lines exposing regions of the semiconductor wafer between the integrated circuits, wherein the second plurality of scribe lines is aligned with the first plurality of scribe lines. The method also involves plasma etching the semiconductor wafer through the second plurality of scribe lines to singulate the integrated circuits.
1. A method of dicing a semiconductor wafer comprising a plurality of integrated circuits on a front side thereof and metallization on a backside thereof, the method comprising:
patterning the metallization on the backside with a first laser scribing process to provide a first plurality of laser scribe lines on the backside, and die marking the back side of the semiconductor wafer during the first laser scribing process, the patterning performed without using a mask;
subsequent to performing the first laser scribing process, forming a mask on the front side of the semiconductor wafer;
patterning, from the front side of the semiconductor wafer, the mask with a second laser scribing process to provide a patterned mask and to provide a second plurality of scribe lines exposing regions of the semiconductor wafer between the integrated circuits, wherein the second plurality of scribe lines is aligned with the first plurality of scribe lines; and
plasma etching the semiconductor wafer through the second plurality of scribe lines to singulate the integrated circuits.
2. The method of claim 1 , wherein the first and second laser scribing processes involve using the same laser conditions.
3. The method of claim 1 , wherein the first and second laser scribing processes involve using a femtosecond-based laser.
4. The method of claim 1 , wherein the first plurality of scribe lines comprises trenches formed partially into the backside of the semiconductor wafer.
5. The method of claim 1 , wherein the second plurality of scribe lines comprises trenches formed partially into the front side of the semiconductor wafer.
6. The method of claim 1 , wherein forming the mask on the front side comprises forming a water soluble mask.
7. The method of claim 1 , wherein forming the mask on the front side comprises forming a UV-curable mask.
8. The method of claim 1 , wherein the first and second laser scribing processes involve using different laser conditions.
9. A method of dicing a semiconductor wafer comprising a plurality of integrated circuits on a front side thereof and metallization on a backside thereof, the method comprising:
patterning the metallization on the backside with a first laser scribing process to provide a first plurality of laser scribe lines on the backside, the patterning performed without using a mask;
subsequent to performing the first laser scribing process, forming a mask on the front side of the semiconductor wafer;
patterning, from the front side of the semiconductor wafer, the mask with a second laser scribing process to provide a patterned mask and to provide a second plurality of scribe lines exposing regions of the semiconductor wafer between the integrated circuits, wherein the second plurality of scribe lines is aligned with the first plurality of scribe lines; and
plasma etching the semiconductor wafer through the second plurality of scribe lines to singulate the integrated circuits.
10. The method of claim 9 , wherein the first and second laser scribing processes involve using the same laser conditions.
11. The method of claim 9 , wherein the first and second laser scribing processes involve using a femtosecond-based laser.
12. The method of claim 9 , wherein the first plurality of scribe lines comprises trenches formed partially into the backside of the semiconductor wafer.
13. The method of claim 9 , wherein the second plurality of scribe lines comprises trenches formed partially into the front side of the semiconductor wafer.
14. The method of claim 9 , wherein forming the mask on the front side comprises forming a water soluble mask.
15. The method of claim 9 , wherein forming the mask on the front side comprises forming a UV-curable mask.
16. The method of claim 9 , wherein the first and second laser scribing processes involve using different laser conditions.