Method of manufacturing semiconductor device
Provided is a method of manufacturing a semiconductor device. The method includes providing an object to be processed including a multilayer film formed by alternately laminating a first film and a second film having different dielectric coefficients within a processing container of a plasma processing apparatus; and repeatedly performing a sequence including: supplying a first gas including O 2 gas or N 2 gas, and a rare gas into the processing container and exciting the first gas, supplying a second gas including a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the second gas, and supplying a third gas including HBr gas, a fluorine-containing gas, and a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the third gas, so that the multilayer film is etched through a mask.
1. A method of manufacturing a semiconductor device, the method comprising:
providing an object to be processed including a multilayer film formed by alternately laminating a first film and a second film having different dielectric coefficients within a processing container of a plasma processing apparatus; and
repeatedly performing a sequence including: supplying a first gas including O2 gas or N2 gas, and a rare gas into the processing container and exciting the first gas, supplying a second gas including a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the second gas, and supplying a third gas including HBr gas, a fluorine-containing gas, and a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the third gas, so that the multilayer film is etched through a mask.
2. The method of claim 1 , further comprising:
before the repeating of the sequence, etching the multilayer film up to a midway position along a lamination direction by supplying a fourth gas including HBr gas, a fluorine-containing gas, and a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the fourth gas,
wherein the multilayer film is etched from the midway position in the lamination direction in the repeating of three supplying steps.
3. The method of claim 2 , wherein the fourth gas further includes at least one of N 2 gas, H 2 gas, and CH 4 gas.
4. The method of claim 1 , wherein the third gas further includes at least one of N 2 gas, H 2 gas, and CH 4 gas.
5. The method of claim 1 , wherein the fluorine-containing gas is NF 3 or SF 6 .
6. The method of claim 1 , further comprising:
before the repeating of the sequence, depositing a carbon-containing reaction product on a surface of the mask by supplying a fifth gas including HBr gas and a fluorocarbon gas into the processing container and exciting the fifth gas.
7. The method of claim 6 , wherein the fifth gas further includes BCl 3 gas.
8. The method of claim 6 , wherein the depositing further comprises applying a bias potential to the multilayer film side such that a power of 2.55 W/cm 2 per unit area or more is given to the multilayer film.
9. The method of claim 1 , wherein the fluorocarbon gas is C 3 F 8 gas, C 4 F 6 gas, or C 4 F 8 gas.
10. The method of claim 1 , wherein the fluorohydrocarbon gas is CH 2 F 2 gas, CH 3 F gas, or CHF 3 gas.
11. The method of claim 1 , wherein the first film is a silicon oxide film, and the second film is a silicon nitride film.
12. The method of claim 1 , wherein the first film is a silicon oxide film, and the second film is a polysilicon film.
13. The method of claim 1 , wherein the first film and the second film are laminated in total of twenty four layers or more.
14. The method of claim 1 , wherein the mask is made of amorphous carbon.