Semiconductor device manufacturing method
A semiconductor device manufacturing method for etching a multilayer film using a mask is provided. The method includes (a) supplying a first gas containing hydrogen, hydrogen bromide, nitrogen trifluoride and at least one of hydrocarbon, fluorocarbon and fluorohydrocarbon into the processing chamber and exciting the first gas to etch the multilayer film from a top surface of the multilayer film to a predetermined position in a stacked direction of the multilayer film; and (b) supplying a second gas that does not substantially contain hydrogen bromide and contains hydrogen and nitrogen trifluoride and at least one of Thydrocarbon, fluorocarbon and fluorohydrocarbon into the processing chamber and exciting the second gas to etch the multilayer film from the predetermined position of the multilayer film to a top surface of the etching stop layer.
1. A semiconductor device manufacturing method for etching, in a processing chamber of a plasma processing apparatus, a multilayer film including first films and second films alternately stacked over an etching stop layer through a mask, a dielectric constant of the first films differing from that of the second films, the method comprising:
supplying a first gas containing hydrogen, hydrogen bromide, nitrogen trifluoride and at least one of hydrocarbon, fluorocarbon and fluorohydrocarbon into the processing chamber and exciting the first gas to etch the multilayer film from a top surface of the multilayer film to a predetermined position by a predetermined depth in a stacked direction of the multilayer film; and
supplying a second gas that does not substantially contain hydrogen bromide and contains hydrogen and nitrogen trifluoride and at least one of hydrocarbon, fluorocarbon and fluorohydrocarbon into the processing chamber and exciting the second gas to etch the multilayer film from the predetermined position of the multilayer film to a top surface of the etching stop layer.
2. The semiconductor device manufacturing method of claim 1 , wherein when etching the multilayer film from the top surface of the multilayer film to the predetermined position in the stacked direction of the multilayer film, a pressure in the processing chamber is set to a first pressure; and
when etching the multilayer film from the predetermined position of the multilayer film to the top surface of the etching stop layer, the pressure in the processing chamber is set to a second pressure higher than the first pressure.
3. The semiconductor device manufacturing method of claim 1 , wherein the etching stop layer is an insulating layer containing metal.
4. The semiconductor device manufacturing method of claim 1 , wherein the etching stop layer contains aluminum oxide.
5. The semiconductor device manufacturing method of claim 1 , wherein the first gas and the second gas contains substantially no nitrogen gas.
6. The semiconductor device manufacturing method of claim 1 , wherein when the multilayer film is etched, a temperature of the multilayer film is controlled to be maintained at about 10° C. or below.
7. The semiconductor device manufacturing method of claim 1 , wherein the fluorocarbon includes at least one of C 3 F 8 , C 4 F 6 and C 4 F 8 .
8. The semiconductor device manufacturing method of claim 1 , wherein the fluorohydrocarbon includes at least one of CH 2 F 2 , CH 3 F and CHF 3 .
9. The semiconductor device manufacturing method of claim 1 , wherein the first film is a silicon oxide film and the second film is a silicon nitride film.
10. The semiconductor device manufacturing method of claim 1 , wherein the first film is a silicon oxide film and the second film is a polysilicon film.
11. The semiconductor device manufacturing method of claim 1 , wherein the first films and the second films are stacked in 24 or more layers in total.
12. The semiconductor device manufacturing method of claim 1 , wherein the mask is made of amorphous carbon.