Semiconductor devices and methods of manufacturing the same
Semiconductor devices and methods of manufacturing the same are disclosed. The semiconductor device a gate dielectric pattern on a substrate and a gate electrode on the gate dielectric pattern opposite the substrate. The gate electrode includes a first conductive pattern disposed on the gate dielectric pattern and including aluminum, and a second conductive pattern disposed between the first conductive pattern and the gate dielectric pattern. The second conductive pattern has an aluminum concentration that is higher than an aluminum concentration of the first conductive pattern. The second conductive pattern may be thicker than the first conductive pattern.
1. A semiconductor device comprising:
a gate dielectric pattern on a substrate; and
a gate electrode on the gate dielectric pattern opposite the substrate, wherein the gate electrode comprises:
a first conductive pattern on the gate dielectric pattern, the first conductive pattern comprising aluminum;
a second conductive pattern disposed between the first conductive pattern and the gate dielectric pattern, the second conductive pattern comprising aluminum and having an aluminum concentration that is higher than an aluminum concentration of the first conductive pattern; and
a third conductive pattern on the first conductive pattern; and
a barrier pattern between the first conductive pattern and the third conductive pattern,
wherein the first conductive pattern is disposed between the second conductive pattern and the third conductive pattern; and
wherein the barrier pattern comprises titanium (Ti), tantalum (Ta), tungsten (W), ruthenium (Ru), niobium (Nb), molybdenum (Mo), hafnium (Hf), lanthanum (La), or any combination thereof.
2. The semiconductor device of claim 1 , further comprising:
gate spacers disposed on respective opposing sidewalk of the gate electrode,
wherein the gate dielectric pattern extends along inner sidewalls of the gate spacers to be disposed between the second conductive pattern and the gate spacers; and
wherein the second conductive pattern extends along inner sidewalls of the gate dielectric pattern to be disposed between the first conductive pattern and the gate spacers.
3. The semiconductor device of claim 1 , further comprising:
an active fin protruding from the substrate in a direction vertical to a top surface of the substrate,
wherein the gate electrode crosses over the active fin; and
wherein the gate dielectric pattern extends along a bottom surface of the gate electrode to cover a top surface and sidewalk of the active fin.
4. The semiconductor device of claim 1 , wherein the first conductive pattern further comprises a first metal carbide and the second conductive pattern further comprises a second metal carbide.
5. A semiconductor device comprising
a gate dielectric pattern on a substrate; and
a gate electrode on the gate dielectric pattern opposite the substrate, wherein the gate electrode comprises:
a first conductive pattern on the gate dielectric pattern, the first conductive pattern comprising aluminum;
a second conductive pattern disposed between the first conductive pattern and the gate dielectric pattern, the second conductive pattern comprising aluminum, having an aluminum concentration that is higher than an aluminum concentration of the first conductive pattern and being thicker than the first conductive pattern;
a third conductive pattern on the first conductive pattern and including a metal nitride free of aluminum; and
a fourth conductive pattern on the third conductive pattern and including metal.
6. The semiconductor device of claim 5 , wherein the metal nitride comprises titanium (Ti), tantalum (Ta), tungsten (W), ruthenium (Ru), niobium (Nb), molybdenum (Mo), hafnium (Hf), lanthanum (La), or any combination thereof.
7. The semiconductor device of claim 5 , wherein the first conductive pattern further comprises a first metal carbide and the second conductive pattern further comprises a second metal carbide.
8. The semiconductor device of claim 7 , wherein each of the first metal carbide and the second metal carbide comprises at least one of titanium (Ti), tantalum (Ta), tungsten (W), ruthenium (Ru), niobium (Nb), molybdenum (Mo), hafnium (Hf), and lanthanum (La), respectively.
9. The semiconductor device of claim 5 , wherein the gate electrode further comprises a metal barrier pattern between the gate dielectric pattern and the second conductive pattern.
10. The semiconductor device of claim 5 , wherein the third conductive pattern comprises tungsten.
11. The semiconductor device of claim 1 , wherein the second conductive pattern is thicker than the first conductive pattern.