Three-dimensional transistor with improved channel mobility
The present invention relates to a semiconductor structure comprising at least a first and a second three-dimensional transistor, wherein the first transistor and the second transistor are electrically connected in parallel to each other, and wherein each transistor comprises a source and a drain, wherein the source and/or drain of the first transistor is at least partially separated from, respectively, the source and/or drain of the second transistor. The invention further relates to a process for realizing such a semiconductor structure.
1. A method of forming a transistor comprising a source/drain region, the method comprising:
forming a plurality of spaced apart fins comprised of a semiconductor material;
after forming said plurality of spaced apart fins, forming a dielectric material layer between each of said plurality of spaced apart fins, said dielectric material layer covering a lower sidewall surface portion and exposing an upper sidewall surface portion of each of said plurality of spaced apart fins;
forming a common gate structure above said dielectric material layer and across said plurality of fins;
after forming said common gate structure, forming a continuous merged source region material and a continuous merged drain region material on said plurality of fins and above said dielectric material layer on opposite sides of said common gate structure, wherein said continuous merged source region material and said continuous merged drain region material are each laterally spaced apart from said common gate structure and extend between and physically contact said plurality of fins, each of said continuous merged source region and drain region materials comprising a first portion having a first sidewall surface that faces toward said common gate structure and a second portion having a second sidewall surface that is opposite of said first sidewall surface and faces away from said common gate structure;
performing at least one etching process to remove said first portions of said respective continuous merged source region and drain region materials including said respective first sidewall surfaces thereof while leaving said second portions of said respective continuous merged source region and drain region materials including said respective second sidewall surfaces thereof in place between and in direct physical contact with said plurality of fins so as to thereby define first and second spaces, respectively, on opposite sides of said common gate structure, said first and second spaces exposing respective first and second surface portions of said dielectric material layer formed between each of said plurality of spaced apart fins; and
forming a material in said first and second spaces.
2. The method of claim 1 , wherein said forming said material in said first and second spaces comprises covering said respective first and second exposed surface portions of said dielectric material layer and filling said first and second spaces with one of an insulating material or a stress overlayer material.
3. The method of claim 1 , wherein said performing said at least one etching process to remove said first portions of said respective continuous merged source region and drain region materials comprises forming a third sidewall surface of each of said second portions of said respective continuous merged source region and drain region materials that is opposite of said respective second sidewall surfaces and faces toward said common gate structure.
4. The method of claim 1 , wherein said forming said continuous merged source region material and said continuous merged drain region material comprises performing at least one epitaxial deposition process.
5. The method of claim 1 , wherein each of said first and second spaces separates respective first or second portions of said plurality of fins from one another.
6. The method of claim 3 , wherein said first space is laterally bounded by at least said third sidewall surface of said second portion of said continuous merged source region remaining between said plurality of fins after performing said at least one etching process and said second space is laterally bounded by at least said third sidewall surface of said second portion of said continuous merged drain region remaining between said plurality of fins after performing said at least one etching process.
7. The method of claim 1 , wherein said common gate structure is one of a dummy gate structure or a final gate structure.
8. A method of forming a transistor comprising a source/drain region, the method comprising:
forming a plurality of spaced apart fins comprised of a semiconductor material;
forming a common gate structure across said plurality of fins, said common gate structure having first and second sides that are opposite one another;
after forming said common gate structure, performing at least one epitaxial deposition process to form a continuous merged source region epi material and a continuous merged drain region epi material on said plurality of fins and above a fin isolation material positioned between each of said plurality of fins on opposite sides of said common gate structure, said fin isolation material covering lower sidewall surface portions of each of said plurality of fins, wherein said continuous merged source region epi material and said continuous merged drain region epi material are each laterally spaced apart from said common gate structure and extend between and physically contact said plurality of fins, each of said continuous merged source region and drain region epi materials comprising a first portion having a first sidewall surface that faces toward said common gate structure and a second portion having a second sidewall surface that is opposite of said first sidewall surface and faces away from said common gate structure;
performing at least one etching process to:
remove said second portion of said continuous merged source region epi material positioned between said plurality of fins including said second sidewall surface and expose a source-side surface portion of said fin isolation material while leaving said first portion of said continuous merged source region epi material including said first sidewall surface thereof positioned between and in direct physical contact with said plurality of fins and so as to thereby define a first space located on said first side of said common gate structure; and
remove said second portion of said continuous merged drain region epi material positioned between said plurality of fins including said second sidewall surface and expose a drain-side surface portion of said fin isolation material while leaving said first portion of said continuous merged drain region epi material including said first sidewall surface thereof positioned between and in direct physical contact with said plurality of fins and so as to thereby define a second space located on said second side of said common gate structure; and
forming a material in said first and second spaces.
9. A method of forming a transistor comprising a source/drain region, the method comprising:
forming a plurality of spaced apart fins comprised of a semiconductor material;
forming an insulating layer between each of said plurality of fins, said insulating layer covering a lower sidewall surface portion of each of said plurality of fins and exposing an upper sidewall surface portion of each of said plurality of fins;
forming a common gate structure across said plurality of fins and above said insulating layer formed between each of said plurality of fins, said common gate structure having first and second sides that are opposite one another;
after forming said common gate structure, performing at least one epitaxial deposition process to form a continuous merged source region epi material and a continuous merged drain region epi material on said plurality of fins and above said insulating layer formed between said plurality of fins on opposite sides of said common gate structure, wherein said continuous merged source region epi material and said continuous merged drain region epi material are each laterally spaced apart from said common gate structure and extend continuously between and physically contact said plurality of fins, each of said continuous merged source region and drain region epi materials comprising a first portion having a first sidewall surface that faces toward said common gate structure and a second portion having a second sidewall surface that is opposite of said first sidewall surface and faces away from said common gate structure;
performing at least one etching process to:
remove said first portion of said continuous merged source region epi material positioned between said plurality of fins including said first sidewall surface and so as to thereby define a first space located on said first side of said common gate structure and to define an independent source region comprising said second portion of said continuous merged source region epi material including said second sidewall surface that extends continuously between and physically contacts each respective fin of said plurality of fins, said first space exposing a first upper surface portion of said insulating layer on said first side of said common gate structure; and
remove said first portion of said continuous merged drain region epi material positioned between said plurality of fins including said first sidewall surface and so as to thereby define a second space located on said second side of said common gate structure and to define an independent drain region comprising said second portion of said continuous merged drain region epi material including said second sidewall surface that extends continuously between and physically contacts each respective fin of said plurality of fins, said second space exposing a second upper surface portion of said insulating layer on said second side of said common gate structure; and
forming a material in said first and second spaces, said material covering said exposed first and second upper surface portions of said insulating layer.
10. The method of claim 9 , wherein said performing at least one etching process to remove said first portions of said respective continuous merged source region and drain region epi materials comprises forming a third sidewall surface of each of said second portions of said respective continuous merged source region and drain region materials that is opposite of said respective second sidewall surfaces and faces toward said common gate structure.
11. The method of claim 10 , wherein said first space is laterally bounded by said remaining second portion of said continuous merged source region epi material and said plurality of fins on said first side of said common gate structure and said second space is laterally bounded by said remaining second portion of said continuous merged drain region epi material and said plurality of fins on said second side of said common gate structure.
12. The method of claim 8 , wherein said fin isolation material is formed to cover a lower portion and expose an upper portion of each of said plurality of fins.
13. The method of claim 8 , wherein said performing said at least one etching process to remove said second portions of said respective continuous merged source region and drain region epi materials comprises forming a third sidewall surface of each of said first portions of said respective continuous merged source region and drain region epi materials that is opposite of said respective first sidewall surfaces and faces away from said common gate structure.
14. The method of claim 8 , wherein said forming said material in said first and second spaces comprises covering said respective source-side and drain-side exposed surface portions of said fin isolation material and filling said first and second spaces with one of an insulating material or a stress overlayer material.
15. The method of claim 8 , wherein said common gate structure is one of a dummy gate structure or a final gate structure.
16. The method of claim 9 , wherein said material formed in said first and second spaces comprises one of an insulating material or a stress overlayer material.
17. The method of claim 9 , wherein said common gate structure is one of a dummy gate structure or a final gate structure.
18. The method of claim 13 , wherein said first space is laterally bounded by said remaining first portion of said continuous merged source region and said plurality of fins and said second space is laterally bounded by said remaining first portion of said continuous merged drain region and said plurality of fins.