Apparatuses, circuits, and methods for protection circuits for dual-direction nodes
Apparatuses, circuits, and methods are disclosed for biased protection circuits for dual-direction nodes. In one such example apparatus, a protection circuit is coupled to a dual-direction node, and includes a positive protection component and a negative protection component. The protection circuit is configured to protect the dual-direction node during an over-limit electrical condition. The protection circuit is configured to control a turn-on condition of the protection circuit.
1. An apparatus, comprising:
a protection circuit coupled to a dual-direction node, the protection circuit comprising a positive protection component and a negative protection component, the protection circuit configured to protect the dual-direction node during an over-limit electrical condition,
wherein the positive protection component includes a first portion formed in a first well and further includes a second portion formed in a second well, and wherein the negative protection component includes a first portion formed in the second well and further includes a second portion formed in the first well,
wherein the first portion of the positive protection component and the first portion of the negative protection component are coupled to the dual-direction node, and
wherein the protection circuit is configured to control a turn-on condition of the protection circuit.
2. The apparatus of claim 1 , wherein the protection circuit is configured to dissipate current from the dual-direction node during the over-limit electrical condition.
3. The apparatus of claim 2 , wherein the positive protection component is configured to dissipate current from a positive ESD event and the negative protection component is configured to dissipate current from a negative ESD event.
4. The apparatus of claim 1 , wherein the protection circuit is configured to clamp a voltage provided to the dual-direction node.
5. The apparatus of claim 1 , wherein the protection circuit being configured to control a turn-on condition of the protection circuit comprises the protection circuit being configured to have the turn-on condition controlled by a first control signal and a second control signal.
6. The apparatus of claim 5 , wherein the positive protection component is controlled by the first control signal and the negative protection component is controlled by the second control signal.
7. The apparatus of claim 6 , wherein the positive protection component is controlled by the second control signal and the negative protection component is controlled by the first control signal.
8. An apparatus, comprising:
a protection circuit coupled to a dual-direction node, the protection circuit comprising a positive protection component and a negative protection component, the protection circuit configured to protect the dual-direction node during an over-limit electrical condition,
wherein the protection circuit is configured to have a turn-on condition of the protection circuit controlled by a first control signal and a second control signal, and
wherein the first control signal is an isolated p-well signal, and the isolated p-well signal is generated to bias a plurality of isolated p-wells in the apparatus, the plurality of isolated p-wells outside of the protection circuit.
9. The apparatus of claim 5 , wherein the second control signal is generated by a reverse diode connection to a voltage source.
10. The apparatus of claim 5 , wherein the first control signal is a negative voltage, and is provided to the protection circuit by a voltage pump.
11. The apparatus of claim 5 , wherein the first control signal determines the greatest negative voltage at which the protection circuit clamps during a negative ESD event.
12. The apparatus of claim 5 , wherein the first and second control signals are selectively provided to the protection circuit.
13. The apparatus of claim 1 , further comprising:
an active device coupled to the dual-direction node.
14. The apparatus of claim 1 , wherein the positive protection component and the negative protection component are separate and distinct.
15. The apparatus of claim 1 , wherein the turn-on condition is a positive turn-on condition and the protection circuit is also configured to control a negative turn-on condition of the protection circuit.
16. The apparatus of claim 15 , wherein the positive turn-on condition is a positive voltage and the negative turn-on condition is a negative voltage.
17. The apparatus of claim 1 , wherein the positive and negative protection components comprise SCRs coupled to a reference voltage node.
18. The apparatus of claim 17 , wherein the reference voltage node is ground.
19. The apparatus of claim 1 , wherein the dual-direction node forms a part of a NAND flash memory.
20. A protection circuit, comprising:
a first silicon controlled rectifier (SCR) including a first portion formed in a first well and including a second portion formed in a second well, the first portion of the first SCR coupled to a dual-direction node; and
a second SCR including a first portion formed in the second well and including a second portion formed in the first well, the first portion of the second SCR coupled to the dual-direction node, the first and second SCRs controlled by a first control signal and a second control signal,
wherein a first turn-on condition of the first SCR is at least partially determined by the first control signal, or the lack thereof, and a second turn-on condition of the second SCR is at least partially determined by the second control signal, or the lack thereof.
21. The protection circuit of claim 20 , wherein both of the first and second SCRs are configured to not snapback and are further configured to act as diodes.
22. The protection circuit of claim 20 , wherein both of the first and second SCRs are controlled by both of the first and second control signals.
23. The protection circuit of claim 20 , wherein the first and second SCRs are merged.
24. The protection circuit of claim 20 , wherein the first and second SCRs are selectively biased such that the protection circuit turns on when a voltage applied to the dual-direction node is greater than a turn-on voltage.
25. The protection circuit of claim 20 , wherein the first and second SCRs share a common n-well and a common p-well.
26. A circuit, comprising:
a first well configured to be biased with a first bias signal;
a second well, the second well configured to be biased with a second bias signal, and the first well formed within the second well;
a first doped region within the first well coupled to a reference voltage node;
a second doped region within the first well coupled to a dual-direction node;
a third doped region within the second well coupled to the reference voltage node; and
a fourth doped region within the second well coupled to the dual-direction node.
27. The circuit of claim 26 , wherein the second doped region, the first well, the second well, and the third doped region form a first silicon-controlled rectifier (SCR), and the fourth doped region, the second well, the first well, and the first doped region form a second SCR, the first and second SCRs merged.
28. The circuit of claim 26 , wherein the first and second wells are left floating in a first operating mode and are biased in a second operating mode.
29. The circuit of claim 28 , wherein the first operating mode is a powered-off mode, and the second operating mode is a powered-on mode.
30. The circuit of claim 26 , wherein the first well is an isolated p-well and the second well is an n-well.
31. The circuit of claim 26 , wherein the dual-direction node is a bias pin.