IP Library › Granted Patent US 9,410,753
Granted Patent B2
US 9,410,753 · App. 13/772,467 · Granted Aug 9, 2016

Substrate temperature adjusting method and a method of changing the temperature control range of a heater in a substrate processing apparatus

Inventors: Toshiyuki Makabe (Miyagi, JP); Taketoshi Okajo (Miyagi, JP)
Assignee: TOKYO ELECTRON LIMITED
F28F27/02H01L21/67109
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Quick Facts
Patent No.
US 9,410,753
App. No.
13/772,467
Granted
Aug 9, 2016
Kind
B2
Abstract

A method which changes the temperature control range of a heater of a substrate processing apparatus. The temperature control range of a heater is changed or extended by changing the flow rate of the coolant flowing through a coolant channel from a first flow rate to a second flow rate which is smaller than the first flow rate, to change a first thermal conductivity of a mounting table to a second thermal conductivity which is smaller than the first thermal conductivity. The upper limit of the temperature control range is lower than the heat resistant temperature of a material of an adhesive of the mounting table.

Claims (26)

1. A substrate temperature adjusting method for use with a substrate processing apparatus, wherein the substrate processing apparatus comprises:

a processing chamber including a processing space;

a mounting table including a support base in which a coolant channel having an entrance and an exit is provided, an electrostatic chuck attached to the support base by an adhesive, the adhesive having a heat resistant temperature and a heater disposed inside the electrostatic chuck or at a bottom surface of the electrostatic chuck, the heater having a temperature control range;

a chiller including a main body configured to control a temperature of a coolant and a pump configured to circulate the coolant at a constant first flow rate;

a first channel which connects the chiller and the entrance of the coolant channel;

a second channel which connects the chiller and the exit of the coolant channel;

a bypass channel which branches from a midway of the first channel and is connected to a midway of the second channel;

a flow rate control valve configured to control a flow rate of the coolant flowing through the bypass channel;

a gas supply unit configured to supply a processing gas into the processing space;

a first electrode; and

a power supply configured to apply a voltage between the first electrode and the support base serving as a second electrode, the processing space being formed between the first electrode and the second electrode,

the substrate temperature adjusting method comprising:

circulating the coolant through the coolant channel;

determining whether a target processing temperature is included in the temperature control range of the heater, wherein an upper limit of the temperature control range is lower than the heat resistant temperature of the adhesive and lower than the maximum substrate temperature to be cooled with the cooling capacity of the chiller,

in response to a determination that the target processing temperature is included in the temperature control range, changing a flow rate of the coolant flowing through the coolant channel from the first flow rate to a second flow rate which is smaller than the first flow rate by opening the flow rate control valve to make the coolant flow through the bypass channel at a third flow rate,

wherein a sum of the second flow rate and the third flow rate is equal to the first flow rate.

2. The method of claim 1 , wherein the main body controls the temperature of the coolant to be lower than the temperature at which the cooling capacity of the chiller is saturated.

3. A method of changing a temperature control range of a heater of a substrate processing apparatus, wherein the substrate processing apparatus comprises:

a processing chamber including a processing space;

a mounting table including a support base in which a coolant channel having an entrance and an exit is provided, an electrostatic chuck attached to the support base by an adhesive, the adhesive having a heat resistant temperature and a heater disposed inside the electrostatic chuck or at a bottom surface of the electrostatic chuck, the heater having a temperature control range; and

a chiller including a main body configured to control a temperature of a coolant and a pump configured to circulate the coolant,

the method comprising:

circulating the coolant through the coolant channel;

extending the temperature control range of the heater by changing the flow rate of the coolant flowing through the coolant channel from a first flow rate to a second flow rate which is smaller than the first flow rate to change a first thermal conductivity of the mounting table to a second thermal conductivity which is smaller than the first thermal conductivity,

wherein the upper limit of the temperature control range is lower than the heat resistant temperature of the material of the adhesive.

4. The method of claim 3 , wherein the main body controls the temperature of the coolant to be lower than the temperature at which the cooling capacity of the chiller is saturated.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 16, 2013
From: MAKABE, TOSHIYUKI; OKAJO, TAKETOSHI
To: TOKYO ELECTRON LIMITED
Reel/Frame 030431/0131 →
Priority Claims (1)
JP 2012-035308 · Feb 21, 2012 · national
Continuity (2)
Provisional Application 61606079 · Mar 2, 2012
Related Publication 20130228323A1 · Sep 5, 2013