Method to etch a tungsten containing layer
A method for etching a tungsten containing layer is provided. An etch gas is provided comprising O 2 and a fluorine containing component, wherein the etch gas has at least as many oxygen atoms as fluorine atoms. A plasma is formed from the etch gas. The tungsten containing layer is etched with the plasma formed from the etch gas.
1. A method of etching a tungsten containing layer, comprising:
providing an etch gas comprising O 2 , N 2 , and a fluorine containing component, wherein the etch gas has at least as many oxygen atoms as fluorine atoms and at least as many nitrogen atoms as fluorine atoms;
forming a plasma from the etch gas; and
etching the tungsten containing layer with the plasma formed from the etch gas.
2. The method as recited in claim 1 , further comprising providing a pressure of at least 30 mTorr.
3. The method, as recited in claim 2 , further comprising heating the tungsten layer to at least 30° C.
4. The method, as recited in claim 3 , further comprising providing a bias of between 100 to 400 volts.
5. The method, as recited in claim 4 , wherein an exposed layer of Si, SiO, SiN, or TiN is exposed to the etch of the tungsten containing layer, wherein the etching of the tungsten containing layer selectively etches the tungsten containing layer with respect to the exposed layer.
6. The method, as recited in claim 3 , further comprising providing a bias of less than 400 volts.
7. The method, as recited in claim 3 , wherein the etching the tungsten is maintained until features with aspect ratios of at least 10:1 are etched into the tungsten containing layer.
8. The method, as recited in claim 3 , wherein a total etch gas flow is no more than 1000 sccm.
9. The method, as recited in claim 1 , further comprising providing a pressure of at least 60 mTorr.
10. The method, as recited in claim 1 , further comprising heating the tungsten containing layer to at least 60° C.
11. The method, as recited in claim 1 , further comprising providing a bias of between 100 to 400 volts.
12. The method, as recited in claim 1 , wherein an exposed layer of Si, SiO, SiN, or TiN is exposed to the etch of the tungsten containing layer, wherein the etching of the tungsten containing layer selectively etches the tungsten containing layer with respect to the exposed layer.
13. The method, as recited in claim 1 , further comprising providing a bias of less than 400 volts.
14. The method, as recited in claim 1 , wherein the etching the tungsten is maintained until features with aspect ratios of at least 10:1 are etched into the tungsten containing layer.
15. The method, as recited in claim 1 , wherein a total etch gas flow is no more than 1000 sccm.
16. The method, as recited in claim 1 , wherein the tungsten containing layer is pure tungsten.
17. A method of selectively etching features in a tungsten layer with respect to a Si, SiO, SiN, or TiN layer, comprising:
providing an etch gas comprising O 2 , N 2 , and a fluorine containing component, wherein the etch gas has at least as many oxygen atoms as fluorine atoms and at least as many nitrogen atoms as fluorine atoms;
forming a plasma from the etch gas;
maintaining a chamber pressure of at least 60 mTorr;
providing a bias of between 100 and 400 volts; and
etching the tungsten layer with the plasma formed from the etch gas to form features with an aspect ratio of at least 10 to 1.