Plasma processing apparatus

1. A plasma processing apparatus that turns a gas supplied to a processing chamber into plasma using a high frequency power and performs a plasma process on a processing object, the plasma apparatus comprising:

an upper electrode arranged at the processing chamber and including a plurality of gas supplying zones, the upper electrode being configured to supply a processing gas including a main gas to the processing chamber via the gas supplying zones;

a branch pipe including a plurality of branch parts, the branch pipe being configured to divide the processing gas according to a predetermined flow rate ratio and supply the divided processing gas to the plurality of gas supplying zones;

an addition pipe that is connected to at least one branch part of the plurality of branch parts, the addition pipe being configured to add an adjustment gas to the processing gas; and

a plurality of gas pipes that connect the plurality of branch parts of the branch pipe to the plurality of gas supplying zones,

wherein at least one gas pipe of the plurality of gas pipes that is connected to the branch part to which the addition pipe is connected includes a gas flow path that is arranged to have a bending portion for preventing a gas concentration variation according to a molecular weight ratio of the adjustment gas to the main gas,

wherein the gas flow path of at least one gas pipe of the plurality of gas pipes that is connected to the branch part to which the addition pipe is connected is arranged to have a distance such that a gas mixture of the adjustment gas and the main gas entering an inlet of the gas pipe reaches an outlet of the gas pipe upon or after an elapse of a reaction time required for the gas mixture of the adjustment gas and the processing gas to reach a uniform gas concentration, and

wherein the gas flow path of the gas pipe connected to the branch part to which the addition pipe is connected is configured based on the following formulas (A) and (B):

SL/Q=V/Q=t   (A)

Ln( C Ain /C Aout )=− kt   (B)

wherein the symbols in the formulas represent the following:

S: gas pipe cross-sectional area [cm 2 ];

L: gas pipe length [mm];

Q: gas flow rate at gas pipe inlet/outlet,

t: reaction time for the gas mixture of the main gas and the adjustment gas to reach the uniform gas concentration;

C Ain : gas concentration [M] at gas pipe inlet;

C Aout : gas concentration [M] at gas pipe outlet; and

k: diffusion coefficient.

2. The plasma processing apparatus as claimed in claim 1 , wherein

the plurality of gas supplying zones are created by dividing up a region of the upper electrode radially into an outermost periphery zone and one or more inner periphery zones; and

the addition pipe is connected to at least one branch part of the branch pipe that communicates with the outermost periphery zone.

3. The plasma processing apparatus as claimed in claim 1 , further comprising:

a ground member arranged outside the processing chamber and facing the upper electrode;

wherein the plurality of gas pipes are arranged between the upper electrode and the ground member.

4. The plasma processing apparatus as claimed in claim 1 , wherein

the gas flow path of at least one gas pipe of the plurality of gas pipes that is connected to the branch part to which the addition pipe is connected is at least 150 mm.

5. A plasma processing apparatus that turns a gas supplied to a processing chamber into plasma using a high frequency power and performs a plasma process on a processing object, the plasma apparatus comprising:

an upper electrode arranged at the processing chamber and including a plurality of gas supplying zones, the upper electrode being configured to supply a processing gas including a main gas to the processing chamber via the gas supplying zones;

a branch pipe including a plurality of branch parts, the branch pipe being configured to divide the processing gas according to a predetermined flow rate ratio and supply the divided processing gas to the plurality of gas supplying zones;

an addition pipe that is connected to at least one branch part of the plurality of branch parts, the addition pipe being configured to add an adjustment gas to the processing gas; and

a plurality of gas pipes that connect the plurality of branch parts of the branch pipe to the plurality of gas supplying zones; and

a control unit that calculates a reaction time required for a gas mixture of the adjustment gas and the processing gas entering an inlet of a gas pipe of the plurality of gas pipes that has a distance of at least 150 mm to reach a uniform gas concentration at an outlet of the gas pipe, calculates a gas concentration ratio of the adjustment gas to the main gas based on the calculated reaction time, and controls a gas concentration of the adjustment gas and the main gas to be within the calculated gas concentration ratio,

wherein at least one gas pipe of the plurality of gas pipes that is connected to the branch part to which the addition pipe is connected includes a gas flow path that is arranged to have a bending portion for preventing a gas concentration variation according to a molecular weight ratio of the adjustment gas to the main gas, and

wherein the control unit controls the gas concentration of the adjustment gas and the main gas to be within the calculated gas concentration ratio calculated upon using the gas pipe having a distance of at least 150 mm based on the following formulas (A) and (B):

SL/Q=V/Q=t   (A)

Ln( C Ain /C Aout )=− kt   (B)

wherein the symbols in the formulas represent the following:

S: gas pipe cross-sectional area [cm 2 ];

L: gas pipe length [mm];

Q: gas flow rate at gas pipe inlet/outlet;

t: reaction time for the gas mixture of the main gas and the adjustment gas to reach a uniform gas concentration;

C Ain : gas concentration [M] at gas pipe inlet;

C Aout : gas concentration [M] at gas pipe outlet; and

k: diffusion coefficient.

6. The plasma processing apparatus as claimed in claim 1 , wherein the molecular weight ratio of the adjustment gas to the main gas is 3.68-53.