Thin film, method of forming thin film, semiconductor device including thin film, and method of manufacturing semiconductor device
A thin film, a method of forming the thin film, a semiconductor device including the thin film, and a method of manufacturing the semiconductor device include forming a thin film including a metal oxynitride, and treating the thin film with inert gas ions so as to stabilize properties of the thin film. The metal oxynitride may include zinc oxynitride (ZnO x N y ). The inert gas ions may include at least one of Ar ions and Ne ions. The treating of the thin film with the inert gas ions may be performed by a sputtering process, a plasma treatment process, or the like.
1. A method of forming a thin film, the method comprising:
forming a preliminary thin film including a metal oxynitride on a substrate; and
treating the preliminary thin film with inert gas ions to form the thin film having stabilized properties, the thin film being a semiconductor film, wherein
the treating of the preliminary thin film with the inert gas ions includes performing a sputtering process, the sputtering process including using an acceleration voltage of about 0.5 keV to about 4.0 keV.
2. The method of claim 1 , wherein the metal oxynitride includes zinc oxynitride.
3. The method of claim 1 , wherein the inert gas ions include at least one selected from Ar ions and Ne ions.
4. The method of claim 1 , wherein the sputtering process is performed under a pressure of about 10 −7 Pa to about 10 −6 Pa.
5. The method of claim 1 , wherein the treating of the preliminary thin film with the inert gas ions is performed at about room temperature.
6. A thin film formed according to the method of claim 1 .
7. A thin film, comprising:
a metal oxynitride, wherein
the thin film satisfies the following inequality of EQUATION (1),
( I max −I min )/ I avg <0.3 EQUATION (1)
where I max and min denote a maximum intensity and a minimum intensity of a high-angle annular dark-field scanning transmission electron microscope (HAADF STEM) image of the thin film, respectively, and
where I avg denotes an average intensity of the HAADF STEM image.
8. The thin film of claim 7 , wherein the metal oxynitride includes zinc oxynitride.
9. The thin film of claim 8 , wherein
the metal oxynitride includes amorphous zinc oxynitride, and
a content ratio of the amorphous zinc oxynitride in the thin film is greater than or equal to 80%.
10. A method of manufacturing a transistor, the method comprising:
forming a channel layer including a thin film, a gate electrode, a source electrode, and a drain electrode,
wherein the thin film is formed according to the method of claim 1 .
11. The method of claim 10 , further comprising:
forming an etch stop layer on the channel layer.
12. A transistor, comprising:
a channel layer formed of a metal oxynitride;
a gate electrode corresponding to the channel layer;
a source electrode connected to a first region of the channel layer; and
a drain electrode connected to a second region of the channel layer, wherein
the channel layer satisfies the following inequality of EQUATION (1)
( I max −I min )/ I avg <0.3 EQUATION (1)
where I max and I min denote a maximum intensity and a minimum intensity of a high-angle annular dark-field scanning transmission electron microscope (HAADF STEM) image of the channel layer, respectively, and
where I avg denotes an average intensity of the HAADF STEM image.
13. The transistor of claim 12 , wherein the metal oxynitride includes zinc oxynitride.
14. The transistor of claim 13 , wherein
the metal oxynitride includes amorphous zinc oxynitride, and
a content ratio of the amorphous zinc oxynitride in the channel layer is greater than or equal to 80%.
15. The transistor of claim 12 , further comprising:
an etch stop layer on the channel layer.